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POWER MOSFET. GJ494 Datasheet

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POWER MOSFET. GJ494 Datasheet






GJ494 MOSFET. Datasheet pdf. Equivalent




GJ494 MOSFET. Datasheet pdf. Equivalent





Part

GJ494

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/12/07 REVISED DA TE : GJ494 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 11m 55A The GJ494 uses advanced trench te chnology to provide excellent on-resist ance and low gate charge. The TO-252 pa ckage is universally preferred for all commercial-industrial surface mount app lications and suit.
Manufacture

GTM

Datasheet
Download GJ494 Datasheet


GTM GJ494

GJ494; ed for use as a high side switch in SMPS and general purpose applications. *Sim ple Drive Requirement *Lower On-resista nce *Fast Switching Characteristic Des cription Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.9 0 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.2.


GTM GJ494

0 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5 .80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-So urce Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@1 0V Pulsed Drain Current 1 Symbol VDS V GS ID @TC=25 ID @TC=100 IDM PD @TC=25 T j, Tstg Ratings 30 ±12 55 39 120 63 0 .42 -55 ~ +175 Unit V V A A A W W/ To tal Power Dissipati.


GTM GJ494

on Linear Derating Factor Operating Junc tion and Storage Temperature Range The rmal Data Parameter Thermal Resistance Junction-case Thermal Resistance Juncti on-ambient Max. Max. Symbol Rthj-c Rthj -a Value 2.4 50 Unit /W /W GJ494 Page : 1/4 ISSUED DATE :2006/12/07 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown V oltage Gate Thresh.

Part

GJ494

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/12/07 REVISED DA TE : GJ494 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 11m 55A The GJ494 uses advanced trench te chnology to provide excellent on-resist ance and low gate charge. The TO-252 pa ckage is universally preferred for all commercial-industrial surface mount app lications and suit.
Manufacture

GTM

Datasheet
Download GJ494 Datasheet




 GJ494
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/07
REVISED DATE :
GJ494
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
11m
55A
Description
The GJ494 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited
for use as a high side switch in SMPS and general purpose applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
Linear Derating Factor
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
30
±12
55
39
120
63
0.42
-55 ~ +175
Unit
V
V
A
A
A
W
W/
Value
2.4
50
Unit
/W
/W
GJ494
Page: 1/4




 GJ494
ISSUED DATE :2006/12/07
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
VGS(th)
gfs
IGSS
30
1.0
-
-
- - V VGS=0, ID=250uA
- 2.5 V VDS=VGS, ID=250uA
40 -
S VDS=5V, ID=20A
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 11 m VGS=10V, ID=20A
- 13.5
VGS=4.5V, ID=20A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 22 28
ID=20A
Qgs - 3.7 - nC VDS=15V
Qgd - 2.7 -
VGS=10V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 10
- 6.3
- 21
- 2.8
-
-
-
-
VDS=15V
ns
VGS=10V
RG=3
RL=0.75
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1210 1452
VGS=0V
- 330 -
pF VDS=15V
- 85 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
IS
Trr
Qrr
Min.
-
-
-
-
Typ.
-
-
36
47
Max.
1.0
55
-
-
Unit Test Conditions
V IS=1A, VGS=0V
A VD= VG=0V, VS=1.0V
ns IS=20A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ494
Page: 2/4




 GJ494
Characteristics Curve
ISSUED DATE :2006/12/07
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
100
10
1
0.1
0.01
0.001
0.0001
0.00001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
GJ494
Page: 3/4






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