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POWER MOSFET. GJ9T16 Datasheet

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POWER MOSFET. GJ9T16 Datasheet






GJ9T16 MOSFET. Datasheet pdf. Equivalent




GJ9T16 MOSFET. Datasheet pdf. Equivalent





Part

GJ9T16

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/16 REVISED DA TE : GJ9T 16 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 20V 2 5m 25A The GJ9T16 provide the designer with the best combination of fast swit ching, ruggedized device design, ultra low on-resistance and cost-effectivenes s. The TO-252 package is universally pr eferred for all co.
Manufacture

GTM

Datasheet
Download GJ9T16 Datasheet


GTM GJ9T16

GJ9T16; mmercial-industrial surface mount applic ations and suited for low voltage appli cations such as DC/DC converters. *Low Gate Charge *Single Drive Requirement * Capable of 2.5V gate drive Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max . 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3. 00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Mil.


GTM GJ9T16

limeter Min. Max. 0.50 0.70 2.20 2.40 0. 45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Paramet er Drain-Source Voltage Gate-Source Vol tage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pul sed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tst g Ratings 20 ±12 25 16 90 25 0.2 -55 ~ +150 Unit V V A .


GTM GJ9T16

A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Dat a Parameter Thermal Resistance Junction -case Thermal Resistance Junction-ambie nt Max. Max. Symbol Rthj-c Rthj-a Value 5 110 Unit /W /W GJ9T16 Page: 1/4 I SSUED DATE :2005/11/16 REVISED DATE : Electrical Characteristics (Tj = 25 Par ameter Drain-Sourc.

Part

GJ9T16

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/16 REVISED DA TE : GJ9T 16 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 20V 2 5m 25A The GJ9T16 provide the designer with the best combination of fast swit ching, ruggedized device design, ultra low on-resistance and cost-effectivenes s. The TO-252 package is universally pr eferred for all co.
Manufacture

GTM

Datasheet
Download GJ9T16 Datasheet




 GJ9T16
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/16
REVISED DATE :
GJ9T16
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
25m
25A
Description
The GJ9T16 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Single Drive Requirement
*Capable of 2.5V gate drive
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@4.5V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
20
±12
25
16
90
25
0.2
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
5
110
Unit
/W
/W
GJ9T16
Page: 1/4




 GJ9T16
ISSUED DATE :2005/11/16
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
20
-
0.5
-
-
-
0.01
-
19
-
-
-
1.5
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=5V, ID=18A
nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 25 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 25 m VGS=4.5V, ID=6A
- 40
VGS=2.5V, ID=5.2A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 10 16
ID=18A
Qgs - 3 - nC VDS=16V
Qgd - 5 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 10 -
VDS=10V
Tr
Td(off)
-
-
98
18
-
-
ID=18A
ns VGS=5V
RG=3.3
Tf - 6 -
RD=0.56
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 870 1390
VGS=0V
- 160 -
pF VDS=20V
- 120 -
f=1.0MHz
Gate Resistance
Rg - 1.38 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
19
10
Max.
1.3
-
-
Unit Test Conditions
V IS=18A, VGS=0V
ns IS=18A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ9T16
Page: 2/4




 GJ9T16
Characteristics Curve
ISSUED DATE :2005/11/16
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ9T16
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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