Document
25AA1024
1 Mbit SPI Bus Serial EEPROM
Device Selection Table
Part Number 25AA1024
VCC Range 1.8-5.5V
Page Size 256 Byte
Temp. Ranges I
Packages P, SM, MF
Features
• 20 MHz Maximum Clock Speed • Byte and Page-level Write Operations:
- 256 byte page - 6 ms maximum write cycle time - No page or sector erase required • Low-Power CMOS Technology: - Maximum Write current: 7 mA at 5.5V - Maximum Read current: 10 mA at 5.5V,
20 MHz - Standby current: 1 µA at 2.5V, 85°C
(Deep Power-down) • Electronic Signature for Device ID • Self-Timed Erase and Write Cycles:
- Page Erase (6 ms maximum) - Sector Erase (10 ms maximum) - Chip Erase (10 ms maximum) • Sector Write Protection (32K byte/sector):
- Protect none, 1/4, 1/2 or all of array
• Built-in Write Protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin
• High Reliability: - Endurance: 1M erase/write cycles - Data Retention: >200 years - ESD Protection: 4000V
• Temperature Ranges Supported:
- Industrial (I):-40°C to +85°C
• RoHS Compliant
Pin Function Table
Name
Function
CS
SO WP VSS SI SCK HOLD VCC
Chip Select Input Serial Data Output Write-Protect Ground Serial Data Input Serial Clock Input Hold Input Supply Voltage
Description
The Microchip Technology Inc. 25AA1024 is a 1024 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select (CS) input.
Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.
The 25AA1024 is available in standard packages including 8-lead PDIP and SOIJ, and advanced 8-lead DFN package. All devices are RoHS compliant.
Package Types (not to scale)
CS 1 SO 2 WP 3 VSS 4
25AA1024 25AA1024
DFN
(MF)
PDIP/SOIJ
(P, SM)
8 VCC CS 1
7 HOLD SO 2 6 SCK WP 3
8 VCC 7 HOLD 6 SCK
5 SI
VSS 4
5 SI
2007-2015 Microchip Technology Inc.
DS20001836J-page 1
25AA1024
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (†)
VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature .................................................................................................................................-65°C to 150°C Ambient temperature under bias ...............................................................................................................-40°C to 125°C ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability.
TABLE 1-1: DC CHARACTERISTICS
DC CHARACTERISTICS
Industrial (I)*:
TA = 0°C to +85°C
Industrial (I):
TA = -40°C to +85°C
* Limited industrial temperature range.
VCC = 1.8V to 5.5V VCC = 2.0V to 5.5V
Param. No.
Sym.
Characteristic
D001
VIH1 High-level Input Voltage
D002 D003
VIL1 Low-level Input VIL2 Voltage
D004 D005
VOL Low-level Output VOL Voltage
D006
VOH High-level Output Voltage
D007
ILI Input Leakage Current
D008
ILO Output Leakage Current
D009
CINT
Internal Capacitance (all inputs and outputs)
D010 ICCREAD
Min. 0.7 VCC
-0.3 -0.3 — — VCC -0.2
—
—
—
—
Max. VCC +1
0.3 VCC 0.2 VCC
0.4 0.2 —
±1
±1
7
10
Units V
V V V V V
µA
µA
pF
mA
D011
Operating Current ICCWRITE
D012
ICCS Standby Current
—
— — —
5 mA
7 mA 5 mA 12 A
D013 Note:
ICCSPD Deep Power-down Current
—
1 µA
This parameter is periodically sampled and not 100% tested.
Test Conditions
VCC≥ 2.7V VCC < 2.7V IOL = 2.1 mA IOL = 1.0 mA, VCC < 2.5V IOH = -400 µA
CS = VCC, VIN = VSS or VCC
CS = VCC, VOUT = VSS or VCC
TA = 25°C, CLK = 1.0 MHz, VCC = 5.0V (Note)
VCC = 5.5V; FCLK = 20.0 MHz; SO = Open VCC = 2.5V; FCLK = 10.0 MHz; SO = Open VCC = 5.5V VCC = 2.5V CS = VCC = 5.5V, Inputs tied to VCC or VSS, 85°C CS = VCC = 2.5V, Inputs tied to VCC or VSS, 85°C
DS20001836J-page 2
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