2SK3653B

DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3653B is suitable for converter of ECM. General-purpose product. 0.2 PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.13 +0.1 –0.05 1.2 ±0.1 Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) Especially suitable for audio and telephone Super thin thickness package: t = 0.37 mm TYP. 0.8 ±0.1 FEATURES 3 0 to 0.05 0.45 0.45 MAX. 0.4 1.4 ±0.1 ORDERING INFORMATION PART NUMBER 2SK3653B PACKAGE 3pXSOF (0814) 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 V V mA mA mW °C °C EQUIVALENT CIRCUIT 2 3 1 1: Source 2: Drain 3: Gate Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17284EJ1V0DS00 (1st edition) Date Published August 2004 NS CP(K) Printed in Japan (0.26) 2 1 2004 2SK3653B ELECTRICAL CHARAC...