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N-Channel MOSFET. 2SK4028 Datasheet

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N-Channel MOSFET. 2SK4028 Datasheet






2SK4028 MOSFET. Datasheet pdf. Equivalent




2SK4028 MOSFET. Datasheet pdf. Equivalent





Part

2SK4028

Description

N-Channel MOSFET



Feature


DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK4028 N-CH ANNEL SILICON JUNCTION FIELD EFFECT TRA NSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4028 is suitable fo r converter of ECM. PACKAGE DRAWING (U nit: mm) 1.2 ±0.1 0.3 –0.05 +0.1 MA X. 0.33 FEATURES • High gain 1.2 ±0 .1 • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • .
Manufacture

NEC

Datasheet
Download 2SK4028 Datasheet


NEC 2SK4028

2SK4028; Ultra thin thickness package t = 0.3 mm TYP. 0.8 ±0.1 −1.0 dB (VDD = 2.0 V , C = 5 pF, RL = 2.2 kΩ) 3 0 to 0.0 2 2 1 0.4 0.4 0.13 –0.05 +0.1 ORDERING INFORMATION PART NUMBER 2SK402 8 PACKAGE 3pXSOF03 (0812) 0.2 +0.1 – 0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C ) Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Diss.


NEC 2SK4028

ipation Junction Temperature Storage Tem perature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 V V m A mA mW °C °C EQUIVALENT CIRCUIT 2 3 1 1: Source 2: Drain 3: Gate Caution Please take care of ESD (Electro Stati c Discharge) when you handle the device in this document. The information in this document is subject to change with out notice. Before using.


NEC 2SK4028

this document, please confirm that this is the latest version. Not all produc ts and/or types are available in every country. Please check with an NEC Elect ronics sales representative for availab ility and additional information. Docum ent No. D17529EJ1V0DS00 (1st edition) D ate Published April 2005 NS CP(K) Print ed in Japan 2005 2SK4028 ELECTRICAL C HARACTERISTICS (TA.

Part

2SK4028

Description

N-Channel MOSFET



Feature


DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK4028 N-CH ANNEL SILICON JUNCTION FIELD EFFECT TRA NSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4028 is suitable fo r converter of ECM. PACKAGE DRAWING (U nit: mm) 1.2 ±0.1 0.3 –0.05 +0.1 MA X. 0.33 FEATURES • High gain 1.2 ±0 .1 • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • .
Manufacture

NEC

Datasheet
Download 2SK4028 Datasheet




 2SK4028
www.DataSheet4U.com
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK4028
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK4028 is suitable for converter of ECM.
FEATURES
High gain
1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k)
Low noise
115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k)
Ultra thin thickness package
t = 0.3 mm TYP.
ORDERING INFORMATION
PART NUMBER
2SK4028
PACKAGE
3pXSOF03 (0812)
PACKAGE DRAWING (Unit: mm)
1.2 ±0.1
0.3
+0.1
–0.05
MAX. 0.33
3
21
0.4 0.4
0 to 0.02
0.13
+0.1
–0.05
0.2
+0.1
–0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 1.0 V)
VDSX
20
Gate to Drain Voltage
VGDO
20
Drain Current
ID 10
Gate Current
IG 10
Total Power Dissipation
PT 100
Junction Temperature
Tj 125
Storage Temperature
Tstg 55 to +125
V
V
mA
mA
mW
°C
°C
EQUIVALENT CIRCUIT
2
3
1: Source
2: Drain
3: Gate
1
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17529EJ1V0DS00 (1st edition)
Date Published April 2005 NS CP(K)
Printed in Japan
2005




 2SK4028
2SK4028
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Cut-off Current
IDSS VDS = 2.0 V, VGS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance
VGS(off)
| yfs1 |
VDS = 2.0 V, ID = 1.0 µA
VDS = 2.0 V, ID = 30 µA, f = 1.0 kHz
| yfs2 | VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz
Input Capacitance
Ciss VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz
Voltage Gain
GV VDD = 2.0 V, C = 5 pF, RL = 2.2 k,
VIN = 10 mV, f = 1 kHz
Noise Voltage
NV VDD = 2.0 V, C = 5 pF, RL = 2.2 k,
A-curve
MIN.
90
320
800
TYP.
250
0.37
470
1600
4.0
1.0
MAX.
430
1.0
UNIT
µA
V
µS
µS
pF
dB
115
dB
IDSS CLASSIFICATION
MARKING
DE
IDSS (µA)
90 to 180
GAIN TEST CIRCUIT
VDD
RL
Out
DF
150 to 240
DH
210 to 350
DJ
320 to 430
C
NOISE VOLTAGE TEST CIRCUIT
VDD
RL
JIS A
NV (r.m.s)
C
2 Data Sheet D17529EJ1V0DS




 2SK4028
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF POWER DISSIPATION
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
0.8 0.6 0.4 0.2
20
10
0 0.2 0.4 0.6 0.8
10
20
30
40
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
VGS = 0 V
f = 1.0 MHz
2SK4028
1000
800
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
0.20 V
0.15 V
600
0.10 V
0.05 V
400
200
0
0
0.05 V
VGS = 0 V
2468
VDS - Drain to Source Voltage - V
10
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
10
VDS = 2.0 V
| yfs |
1
VGS(off)
1
1 10 100
VDS - Drain to Source Voltage - V
0.1
10
100 1000
IDSS - Zero Gate Voltage Drain Current - µA
Data Sheet D17529EJ1V0DS
3






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