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MOS FET. 2SK4092 Datasheet

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MOS FET. 2SK4092 Datasheet






2SK4092 FET. Datasheet pdf. Equivalent




2SK4092 FET. Datasheet pdf. Equivalent





Part

2SK4092

Description

SWITCHING N-CHANNEL POWER MOS FET



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SK4092 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK4092 is N-channel MOS FET device that features a low gate charge and exc ellent switching characteristics, and d esigned for high voltage applications s uch as switching power supply, AC adapt er. FEATURES • Low on-state resistan ce RDS(on) = 0.4 Ω M.
Manufacture

NEC

Datasheet
Download 2SK4092 Datasheet


NEC 2SK4092

2SK4092; AX. (VGS = 10 V, ID = 10 A) • Low gate charge QG = 50 nC TYP. (VDD = 450 V, V GS = 10 V, ID = 21 A) • Gate voltage rating: ±30 V • Avalanche capability ratings ORDERING INFORMATION PART NUM BER 2SK4092-A Note LEAD PLATING Sn-Ag- Cu PACKING 100 p/package PACKAGE TO-3 P (MP-88) typ. 5.0 g Note Pb-free (Thi s product does not contain Pb in the ex ternal electrode and othe.


NEC 2SK4092

r parts.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V ) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-3P) 600 ±3 0 ±21 ±60 200 3 150 −55 to +150 21 29.4 V V A A W W °C °C A mJ VDSS VGS S ID(DC) ID(pulse) PT1 PT2 Tch Tstg To tal Power Dissipation (TC = 25°C) Tota l Power Dissipation (TA = 25.


NEC 2SK4092

°C) Channel Temperature Storage Tempera ture Single Avalanche Current Single Av alanche Energy Note2 Note2 IAS EAS No tes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The infor mation in this document is subject to c hange without notice. Before using this document, please confirm that this is the latest version. Not all.

Part

2SK4092

Description

SWITCHING N-CHANNEL POWER MOS FET



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SK4092 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK4092 is N-channel MOS FET device that features a low gate charge and exc ellent switching characteristics, and d esigned for high voltage applications s uch as switching power supply, AC adapt er. FEATURES • Low on-state resistan ce RDS(on) = 0.4 Ω M.
Manufacture

NEC

Datasheet
Download 2SK4092 Datasheet




 2SK4092
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4092
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 10 A)
Low gate charge
QG = 50 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 21 A)
Gate voltage rating: ±30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK4092-A Note
LEAD PLATING
Sn-Ag-Cu
PACKING
100 p/package
PACKAGE
TO-3P (MP-88) typ. 5.0 g
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
600
±30
±21
±60
200
3
150
55 to +150
21
29.4
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 0 V
(TO-3P)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18776EJ1V0DS00 (1st edition)
Date Published May 2007 NS
Printed in Japan
2007




 2SK4092
2SK4092
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 10 A
VGS = 10 V, ID = 10 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 10 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
QG
QGS
QGD
VF(S-D)
VDD = 450 V,
VGS = 10 V,
ID = 21 A
IF = 21 A, VGS = 0 V
Reverse Recovery Time
trr IF = 21 A, VGS = 0 V,
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±100 nA
2.5 3.0 3.5
V
4.0 S
0.34 0.4 Ω
3240
pF
550 pF
3 pF
38 ns
15 ns
58 ns
12 ns
50 nC
24 nC
17 nC
0.9 1.5
V
480 ns
6000
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18776EJ1V0DS




 2SK4092
2SK4092
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Tch - Channel Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
200
150
100
50
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
ID(DC)
ID(pulse)
101 R(DVS(GoSn)=L1imi 0itVed)
PW = 1i 00 μs
0.1
0.01
0.001
TC = 25°C
Single Pulse
1
10
100
VDS - Drain to Source Voltage - V
1000
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 41.67°C/Wi
10
1 Rth(ch-C) = 0.625°C/Wi
0.1
0.01
100 μ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Data Sheet D18776EJ1V0DS
Single Pulse
100 1000
3






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