SSR30C120S1

www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com SSR30C100S1 & SSR30C120S1 30 A / 1200 V Schottky Silicon Carbide Rectifier Designer’s Data Sheet Part Number / Ordering Information 1/ SSR30C __ │ │ └ Screening 2/ __ = Not Screened │ │ TX = TX Level TXV = TXV │ │ S = S Level │ │ │ └ Package S1 = SMD1 │ └ Voltage 100 = 1000 V 120 = 1200 V __ __ FEATURES: 1200 Volt Silicon Carbide Schottky Rectifier Average Output Current 30 Amps No Reverse Recovery No Forward Recovery No Switching Time Change Over Temperature Small Package Size TX, TXV, and Space Level Screening Available. 2/ Consult Factory. SMD1 MAXIMUM RATINGS 3/ Peak Repetitive and Peak Reverse Voltage Average Rectified Forward Current 4/ (Resistive Load, 60 Hz, Sine Wave) Peak Surge Current 4/ (8.3 ms Pulse, Half Sine Wave, TA = 25oC) Operating & Storage Temperature Junction Temperature Maximum Thermal Resistance (Junction to Case) 4/ Symbol SSR30C100S1 SSR30C120S1 Total Total VRRM VR IO IFSM TOP & Tstg TJ Total RθJC Value 1000 1200 30 120 -55 to +250 -55 to +250 0.8 Units Volts Amps Amps o o o C C C/W NOTES: 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC 4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level. NOTE: All spe...