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SWITCHING TRANSISTOR. GJ1952 Datasheet

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SWITCHING TRANSISTOR. GJ1952 Datasheet






GJ1952 TRANSISTOR. Datasheet pdf. Equivalent




GJ1952 TRANSISTOR. Datasheet pdf. Equivalent





Part

GJ1952

Description

PNP HIGH SPEED SWITCHING TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2005/10 /03 REVISED DATE : GJ1952 Description Features PNP HIGH SPEED SWITCHING TRAN SISTOR The GJ1952 is designed for high speed switching applications. Low satu ration voltage, typically VCE(sat) =-0. 2V at IC/IB=-3A/-0.15A High speed switc hing, typically tf =0.15 s at IC=-3A Wi de SOA Complements to GJ5103 Package D imensions TO-252 .
Manufacture

GTM

Datasheet
Download GJ1952 Datasheet


GTM GJ1952

GJ1952; REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.0 0 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1 .50 5.40 5.80 0.80 1.20 Absolute Maxim um Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter V oltage Emitter to Base Voltage Collecto r Current (DC) Col.


GTM GJ1952

lector Current (Pulse) Total Device Diss ipation (TA=25 ) Total Device Dissipati on (TC=25 ) Junction Temperature Storag e Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ Tstg Ratings -100 -60 -5 -5 -10 1 10 150 -55 ~ +150 Unit V V V A A W W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO * VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sa t)2 *hFE1 *hFE2 fT.


GTM GJ1952

Cob Min. -100 -60 -5 120 40 Typ. 80 130 unless otherwise noted) Max. -10 -10 -0.3 -0.5 -1.2 -1.5 270 Unit V V V uA u A V V V V Test Conditions IC=-50uA, IE= 0 IC=-1mA, IB=0 IE=-50uA, IC=0 VCB=-100 V, IE=0 VEB=-5V, IC=0 IC=-3A, IB=-0.15A IC=-4A, IB=-0.2A IC=-3A, IB=-0.15A IC= -4A, IB=-0.2A VCE=-2V, IC=-1A VCE=-2V, IC=-3A VCE=-10V, IE=0.5A, f=30MHz VCB=- 10V, IE=0, f=1MHz .

Part

GJ1952

Description

PNP HIGH SPEED SWITCHING TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2005/10 /03 REVISED DATE : GJ1952 Description Features PNP HIGH SPEED SWITCHING TRAN SISTOR The GJ1952 is designed for high speed switching applications. Low satu ration voltage, typically VCE(sat) =-0. 2V at IC/IB=-3A/-0.15A High speed switc hing, typically tf =0.15 s at IC=-3A Wi de SOA Complements to GJ5103 Package D imensions TO-252 .
Manufacture

GTM

Datasheet
Download GJ1952 Datasheet




 GJ1952
www.DataSheet4U.com
ISSUED DATE :2005/10/03
REVISED DATE :
GJ1952
PNP HIGH SPEED SWITCHING TRANSISTOR
Description
The GJ1952 is designed for high speed switching applications.
Features
Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A
High speed switching, typically tf =0.15 s at IC=-3A
Wide SOA
Complements to GJ5103
Package Dimensions
TO-252
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Device Dissipation (TA=25 )
PD
Total Device Dissipation (TC=25 )
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-100
-60
-5
-5
-10
1
10
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics (TA = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
Min.
-100
-60
-5
-
-
-
-
-
-
120
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
80
130
unless otherwise noted)
Max.
-
-
-
-10
-10
-0.3
-0.5
-1.2
-1.5
270
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
MHz
pF
Test Conditions
IC=-50uA, IE=0
IC=-1mA, IB=0
IE=-50uA, IC=0
VCB=-100V, IE=0
VEB=-5V, IC=0
IC=-3A, IB=-0.15A
IC=-4A, IB=-0.2A
IC=-3A, IB=-0.15A
IC=-4A, IB=-0.2A
VCE=-2V, IC=-1A
VCE=-2V, IC=-3A
VCE=-10V, IE=0.5A, f=30MHz
VCB=-10V, IE=0, f=1MHz
GJ1952
Page: 1/3




 GJ1952
ton (Turn-on Time)
tstg (Storage Time)
tf (Fall Time)
-
-
-
-
-
-
Characteristics Curve
ISSUED DATE :2005/10/03
REVISED DATE :
0.3 IC=-3A , RL=10
1.5 uS IB1=-IB2=-0.15A
0.3 VCC -30V
*Measure using pulse current
GJ1952
Page: 2/3




 GJ1952
ISSUED DATE :2005/10/03
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ1952
Page: 3/3






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