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POWER MOSFET. GJ3310 Datasheet

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POWER MOSFET. GJ3310 Datasheet






GJ3310 MOSFET. Datasheet pdf. Equivalent




GJ3310 MOSFET. Datasheet pdf. Equivalent





Part

GJ3310

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/12/05 REVISED DA TE : GJ3310 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 1 50m -10A The GJ3310 provide the design er with the best combination of fast sw itching, low on-resistance and cost-eff ectiveness. The TO-252 package is unive rsally preferred for all commercial-ind ustrial surface mo.
Manufacture

GTM

Datasheet
Download GJ3310 Datasheet


GTM GJ3310

GJ3310; unt applications and suited for low volt age and battery power applications. *Si mple Drive Requirement *2.5V Gate Drive Capability Description Features Pac kage Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.2 0 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0. 70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.4 0 0.45 0.55 0 0.15.


GTM GJ3310

0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drai n Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -20 ± 12 -10 -6.2 -24 25 0.01 -55 ~ +150 Uni t V V A A A W W/ Total Power Dissipati on Linear Derating .


GTM GJ3310

Factor Operating Junction and Storage Te mperature Range Thermal Data Parameter Thermal Resistance Junction-case Therm al Resistance Junction-ambient Max. Max . Symbol Rthj-c Rthj-a Value 5.0 110 Un it /W /W GJ3310 Page: 1/5 ISSUED DAT E :2005/12/05 REVISED DATE : Electrica l Characteristics (Tj = 25 Parameter Dr ain-Source Breakdown Voltage Breakdown Voltage Temperatur.

Part

GJ3310

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/12/05 REVISED DA TE : GJ3310 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 1 50m -10A The GJ3310 provide the design er with the best combination of fast sw itching, low on-resistance and cost-eff ectiveness. The TO-252 package is unive rsally preferred for all commercial-ind ustrial surface mo.
Manufacture

GTM

Datasheet
Download GJ3310 Datasheet




 GJ3310
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/12/05
REVISED DATE :
GJ3310
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
150m
-10A
Description
The GJ3310 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage and battery power applications.
Features
*Simple Drive Requirement
*2.5V Gate Drive Capability
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-20
±12
-10
-6.2
-24
25
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
5.0
110
Unit
/W
/W
GJ3310
Page: 1/5




 GJ3310
ISSUED DATE :2005/12/05
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-20
-
-0.5
-
-
- - V VGS=0, ID=-250uA
-0.1 - V/ Reference to 25 , ID=-1mA
- - V VDS=VGS, ID=-250uA
4.4 -
S VDS=-5V, ID=-2.8A
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- -1 uA VDS=-20V, VGS=0
- -25 uA VDS=-16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 150 m VGS=-4.5V, ID=-2.8A
- 250
VGS=-2.5V, ID=-2.0A
6-
ID=-2.8A
1.5 - nC VDS=-6V
0.6 -
VGS=-5V
2.5 -
60 -
70 -
60 -
VDS=-6V
ID=-1A
ns VGS=-5V
RG=6
RD=6
300 -
180 -
60 -
VGS=0V
pF VDS=-6V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
-1.2
-10
-24
Unit Test Conditions
V IS=-10A, VGS=0V, Tj=25
A VD=VG=0V, VS=-1.2V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ3310
Page: 2/5




 GJ3310
Characteristics Curve
ISSUED DATE :2005/12/05
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GJ3310
Fig 6. Type Power Dissipation
Page: 3/5






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