GJ4672

www.DataSheet4U.com ISSUED DATE :2005/07/15 REVISED DATE : GJ4672 Description Features NPN EPITAXIAL SILICON TRANSISTOR The GJ4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse PW=10ms) Total Device Dissipation (TA=25 ) Total Device Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ Tstg Ratings 60 50 6 2 5 1.5 10 150 -55 ~ +150 Unit V V V A A W W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 6 120 Typ. 0.1 210 25 unless otherwise noted) Max. 100 100 0.35 400 MHz pF Unit V V V nA nA V IC=50uA, IE=0 IC=1mA, IB=0 IE=50uA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=1A, IB=50mA VCE=2V, IC=500mA VCE=2V, IE=500mA, f=100MHz VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE Rank Range A 120 ~ 240 B 200 ~ 400 GJ4672 Page: 1/2 ISSUED DATE :2005/07/15 REVISED DATE : Characteristics Curve Important...