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POWER MOSFET. GJ50L02 Datasheet

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POWER MOSFET. GJ50L02 Datasheet






GJ50L02 MOSFET. Datasheet pdf. Equivalent




GJ50L02 MOSFET. Datasheet pdf. Equivalent





Part

GJ50L02

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/12/16 REVISED DA TE : GJ50L02 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 25V 1 5m 45A The GJ50L02 provide the designe r with the best combination of fast swi tching, ruggedized device design, low o n-resistance and cost-effectiveness. Th e TO-252 package is universally preferr ed for all commerc.
Manufacture

GTM

Datasheet
Download GJ50L02 Datasheet


GTM GJ50L02

GJ50L02; ial-industrial surface mount application s and suited for low voltage applicatio ns such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Characteristic Description Features Package Dimensions TO-252 RE F. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Milli.


GTM GJ50L02

meter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1 .20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Volta ge Continuous Drain Current, VGS@10V Co ntinuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC= 25 ID @TC=100 IDM PD @TC=25 Tj, Tstg R atings 25 ±20 45 30 140 44.6 0.36 -55 ~ +150 Unit V V A .


GTM GJ50L02

A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Dat a Parameter Thermal Resistance Junction -case Thermal Resistance Junction-ambie nt Max. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit /W /W GJ50L02 Page: 1/5 ISSUED DATE :2005/12/16 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-So.

Part

GJ50L02

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/12/16 REVISED DA TE : GJ50L02 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 25V 1 5m 45A The GJ50L02 provide the designe r with the best combination of fast swi tching, ruggedized device design, low o n-resistance and cost-effectiveness. Th e TO-252 package is universally preferr ed for all commerc.
Manufacture

GTM

Datasheet
Download GJ50L02 Datasheet




 GJ50L02
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/12/16
REVISED DATE :
GJ50L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
15m
45A
Description
The GJ50L02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
25
±20
45
30
140
44.6
0.36
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
2.8
110
Unit
/W
/W
GJ50L02
Page: 1/5




 GJ50L02
ISSUED DATE :2005/12/16
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.037
-
10
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=20A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 15 m VGS=10V, ID=20A
- 35
VGS=4.5V, ID=10A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 11.5 -
ID=20A
Qgs - 2.1 - nC VDS=20V
Qgd - 8.4 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
7
-
VDS=15V
Tr
Td(off)
-
-
60
17
-
-
ID=20A
ns VGS=10V
RG=3.3
Tf - 9 -
RD=0.75
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 390 -
- 245 -
- 100 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.26
45
140
Unit Test Conditions
V IS=45A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.26V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ50L02
Page: 2/5




 GJ50L02
Characteristics Curve
ISSUED DATE :2005/12/16
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GJ50L02
Fig 6. Type Power Dissipation
Page: 3/5






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