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POWER MOSFET. GJ60T03 Datasheet

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POWER MOSFET. GJ60T03 Datasheet






GJ60T03 MOSFET. Datasheet pdf. Equivalent




GJ60T03 MOSFET. Datasheet pdf. Equivalent





Part

GJ60T03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/24 REVISED DA TE : GJ60T 03 N-CHANNEL ENHANCEMENT MO DE POWER MOSFET BVDSS RDS(ON) ID 30V 12m 45A Description The GJ60T03 provi de the designer with the best combinati on of fast switching, ruggedized device design, low on-resistance and cost-eff ectiveness. The TO-252 package is unive rsally preferred f.
Manufacture

GTM

Datasheet
Download GJ60T03 Datasheet


GTM GJ60T03

GJ60T03; or all commercial-industrial surface mou nt applications and suited for low volt age applications such as DC/DC converte rs. *Low Gate Charge *Simple Drive Requ irement *Fast Switching Speed *RoHS Com pliant Features Package Dimensions TO -252 REF. A B C D E F S Millimeter Mi n. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2 .40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M .


GTM GJ60T03

R Millimeter Min. Max. 0.50 0.70 2.20 2 .40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.8 0 0.80 1.20 Absolute Maximum Ratings P arameter Drain-Source Voltage Gate-Sour ce Voltage Continuous Drain Current, VG S@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±20 45 32 120 44 0.3 52 -55 ~ +175 Unit.


GTM GJ60T03

V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junct ion and Storage Temperature Range Ther mal Data Parameter Thermal Resistance J unction-case Thermal Resistance Junctio n-ambient Max. Max. Symbol Rthj-c Rthj- a Value 3.4 110 Unit /W /W GJ60T03 Pa ge: 1/4 ISSUED DATE :2005/11/24 REVISE D DATE : Electrical Characteristics (T j = 25 Parameter D.

Part

GJ60T03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/24 REVISED DA TE : GJ60T 03 N-CHANNEL ENHANCEMENT MO DE POWER MOSFET BVDSS RDS(ON) ID 30V 12m 45A Description The GJ60T03 provi de the designer with the best combinati on of fast switching, ruggedized device design, low on-resistance and cost-eff ectiveness. The TO-252 package is unive rsally preferred f.
Manufacture

GTM

Datasheet
Download GJ60T03 Datasheet




 GJ60T03
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/24
REVISED DATE :
GJ60T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
12m
45A
Description
The GJ60T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
30
±20
45
32
120
44
0.352
-55 ~ +175
Unit
V
V
A
A
A
W
W/
Value
3.4
110
Unit
/W
/W
GJ60T03
Page: 1/4




 GJ60T03
ISSUED DATE :2005/11/24
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.026
-
25
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=10A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=175 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 250 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 12 m VGS=10V, ID=20A
- 25
VGS=4.5V, ID=15A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 11.6 -
ID=20A
Qgs - 3.9 - nC VDS=24V
Qgd - 7 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 8.8 -
- 57.5 -
- 18.5 -
- 6.4 -
VDS=15V
ID=20A
ns VGS=10V
RG=3.3
RD=0.75
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1135 -
- 200 -
- 135 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
23.3
16
Max.
1.3
-
-
Unit Test Conditions
V IS=45A, VGS=0V
ns IS=20A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ60T03
Page: 2/4




 GJ60T03
Characteristics Curve
ISSUED DATE :2005/11/24
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ60T03
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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