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GJ70T03 Dataheets PDF



Part Number GJ70T03
Manufacturers GTM
Logo GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet GJ70T03 DatasheetGJ70T03 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B GJ70T 03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 10m 60A The GJ70T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Dr.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B GJ70T 03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 10m 60A The GJ70T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Low Gate Charge *Fast Switching Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 60 43 195 53 0.36 -55 ~ +175 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit /W /W GJ70T03 Page: 1/4 ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 25 1.0 Typ. 0.032 35 16.5 5 10.3 8.2 105 21.4 8.5 1485 245 170 Max. 3.0 ±100 1 250 10 18 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=33A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=33A VGS=4.5V, ID=20A ID=33A VDS=20V VGS=4.5V VDS=15V ID=33A VGS=10V RG=3.3 RD=0.45 VGS=0V VDS=25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=175 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD IS ISM 1 Min. - Typ. - Max. 1.3 60 195 Unit V A A Test Conditions IS=60A, VGS=0V, Tj=25 VD=VG=0V, VS=1.3V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GJ70T03 Page: 2/4 ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig .


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