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POWER MOSFET. GJ70T03 Datasheet

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POWER MOSFET. GJ70T03 Datasheet






GJ70T03 MOSFET. Datasheet pdf. Equivalent




GJ70T03 MOSFET. Datasheet pdf. Equivalent





Part

GJ70T03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/02/21 REVISED DA TE :2005/12/12B GJ70T 03 N-CHANNEL ENH ANCEMENT MODE POWER MOSFET BVDSS RDS(O N) ID 25V 10m 60A The GJ70T03 provide the designer with the best combination of fast switching, ruggedized device d esign, low on-resistance and cost-effec tiveness. The TO-252 package is univers ally preferred for.
Manufacture

GTM

Datasheet
Download GJ70T03 Datasheet


GTM GJ70T03

GJ70T03; all commercial-industrial surface mount applications and suited for low voltag e applications such as DC/DC converters . *Simple Drive Requirement *Low Gate C harge *Fast Switching Description Fea tures Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.4 0 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2. 30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimet.


GTM GJ70T03

er Min. Max. 0.50 0.70 2.20 2.40 0.45 0. 55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Dr ain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Conti nuous Drain Current, VGS@10V Pulsed Dra in Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Rati ngs 25 ±20 60 43 195 53 0.36 -55 ~ +17 5 Unit V V A A A W.


GTM GJ70T03

W/ Total Power Dissipation Linear Dera ting Factor Operating Junction and Stor age Temperature Range Thermal Data Par ameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Ma x. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit /W /W GJ70T03 Page: 1/4 ISS UED DATE :2005/02/21 REVISED DATE :2005 /12/12B Electrical Characteristics (Tj = 25 Parameter Dr.

Part

GJ70T03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/02/21 REVISED DA TE :2005/12/12B GJ70T 03 N-CHANNEL ENH ANCEMENT MODE POWER MOSFET BVDSS RDS(O N) ID 25V 10m 60A The GJ70T03 provide the designer with the best combination of fast switching, ruggedized device d esign, low on-resistance and cost-effec tiveness. The TO-252 package is univers ally preferred for.
Manufacture

GTM

Datasheet
Download GJ70T03 Datasheet




 GJ70T03
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/02/21
REVISED DATE :2005/12/12B
GJ70T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
10m
60A
Description
The GJ70T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
25
±20
60
43
195
53
0.36
-55 ~ +175
Unit
V
V
A
A
A
W
W/
Value
2.8
110
Unit
/W
/W
GJ70T03
Page: 1/4




 GJ70T03
ISSUED DATE :2005/02/21
REVISED DATE :2005/12/12B
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.032
-
35
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=33A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=175 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 250 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 10 m VGS=10V, ID=33A
- 18
VGS=4.5V, ID=20A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 16.5 -
ID=33A
Qgs - 5 - nC VDS=20V
Qgd - 10.3 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 8.2 -
- 105 -
- 21.4 -
- 8.5 -
VDS=15V
ID=33A
ns VGS=10V
RG=3.3
RD=0.45
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1485 -
- 245 -
- 170 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
60
195
Unit Test Conditions
V IS=60A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ70T03
Page: 2/4




 GJ70T03
Characteristics Curve
ISSUED DATE :2005/02/21
REVISED DATE :2005/12/12B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ70T03
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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