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Pb Free Plating Product
ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B
GJ70T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 10m 60A
The GJ70T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Low Gate Charge *Fast Switching
Description
Features
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings 25 ±20 60 43 195 53 0.36 -55 ~ +175
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit /W /W
GJ70T03
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ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 25 1.0 Typ. 0.032 35 16.5 5 10.3 8.2 105 21.4 8.5 1485 245 170 Max. 3.0 ±100 1 250 10 18 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=33A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=33A VGS=4.5V, ID=20A ID=33A VDS=20V VGS=4.5V VDS=15V ID=33A VGS=10V RG=3.3 RD=0.45 VGS=0V VDS=25V f=1.0MHz
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=175 )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Source-Drain Diode
Parameter Forward On Voltage
2
Symbol VSD IS ISM
1
Min. -
Typ. -
Max. 1.3 60 195
Unit V A A
Test Conditions IS=60A, VGS=0V, Tj=25 VD=VG=0V, VS=1.3V
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%.
GJ70T03
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ISSUED DATE :2005/02/21 REVISED DATE :2005/12/12B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig .