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POWER MOSFET. GJ75N03 Datasheet

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POWER MOSFET. GJ75N03 Datasheet






GJ75N03 MOSFET. Datasheet pdf. Equivalent




GJ75N03 MOSFET. Datasheet pdf. Equivalent





Part

GJ75N03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/08/16 REVISED DA TE : GJ75N03 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 25V 4 .5m 75A Description The GJ75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-252 package is universally preferred for al l commercial-indus.
Manufacture

GTM

Datasheet
Download GJ75N03 Datasheet


GTM GJ75N03

GJ75N03; trial surface mount applications and sui ted for low voltage applications such a s DC/DC converters. *Low Gate Charge *S imple Drive Requirement *Fast Switching Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max . 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3. 00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.5 0 0.70 2.20 2.40 0.


GTM GJ75N03

.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Paramet er Drain-Source Voltage Gate-Source Vol tage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pul sed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Rati ngs 25 ±20 75 62.5 350 96 0.75 400 40 -55 ~ +150 Unit V V A A A W W/ mJ A T otal Power Dissipat.


GTM GJ75N03

ion Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Sin gle Pulse Avalanche Current Operating J unction and Storage Temperature Range Thermal Data Parameter Thermal Resistan ce Junction-case Thermal Resistance Jun ction-ambient Max. Max. Symbol Rthj-cas e Rthj-amb Value 1.3 110 Unit /W /W GJ 75N03 Page: 1/4 ISSUED DATE :2006/08/ 16 REVISED DATE : .

Part

GJ75N03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/08/16 REVISED DA TE : GJ75N03 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 25V 4 .5m 75A Description The GJ75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-252 package is universally preferred for al l commercial-indus.
Manufacture

GTM

Datasheet
Download GJ75N03 Datasheet




 GJ75N03
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/08/16
REVISED DATE :
GJ75N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
4.5m
75A
Description
The GJ75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast
switching performance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@4.5V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
EAS
IAS
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
25
±20
75
62.5
350
96
0.75
400
40
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Value
1.3
110
Unit
/W
/W
GJ75N03
Page: 1/4




 GJ75N03
ISSUED DATE :2006/08/16
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.02
-
29
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=30A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance3 RDS(ON)
-
-
3.7 4.5 m VGS=10V, ID=40A
6.0 7
VGS=4.5V, ID=30A
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 33 -
ID=30A
Qgs - 9 - nC VDS=20V
Qgd - 15 -
VGS=4.5V
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 10 -
VDS=15V
Tr
Td(off)
-
-
80
37
-
-
ID=30A
ns VGS=10V
RG=3.3
Tf - 85 -
RD=0.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2070 -
- 990 -
- 300 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
50
51
Max.
1.5
-
-
Unit Test Conditions
V IS=20A, VGS=0V
ns IS=30A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=20V, L=0.1mH, RG=25 , IAS=10A.
3. Pulse width 300us, duty cycle 2%.
GJ75N03
Page: 2/4




 GJ75N03
Characteristics Curve
ISSUED DATE :2006/08/16
REVISED DATE :
Fig 1. Typical Output Characteristics
6.4
Fig 2. Typical Output Characteristics
5.6
4.8
4.0
3.2
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ75N03
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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