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PLANAR TRANSISTOR. GJ772 Datasheet

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PLANAR TRANSISTOR. GJ772 Datasheet






GJ772 TRANSISTOR. Datasheet pdf. Equivalent




GJ772 TRANSISTOR. Datasheet pdf. Equivalent





Part

GJ772

Description

PNP EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2002/12 /13 REVISED DATE :2005/08/10B GJ772 De scription P NP EP ITAXI AL PL ANAR T R ANSI STOR The GJ772 is designed for us ing in output stage of 10W amplifier, v oltage regulator, DC-DC converter and r elay driver. Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. M ax. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.7.
Manufacture

GTM

Datasheet
Download GJ772 Datasheet


GTM GJ772

GJ772; 0 0.90 0.60 0.90 REF. G H J K L M R Mi llimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0. 80 1.20 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature St orage Temperature Collector to Base Vol tage Collector to Emitter Voltage Emitt er to Base Voltage Collector Current Co llector Current (Pulse) Base Current To tal Power Dissipat.


GTM GJ772

ion(TC=25 ) Symbol Tj Tstg VCBO VCEO VEB O IC IC IB PD Ratings +150 -55~+150 -40 -30 -5 -3 -7 -0.6 10 Unit V V V A A A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VC E(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min . -40 -30 -5 30 100 Typ. -0.3 -1 80 55 ) Max. -1 -1 -0.5 -2 500 Unit V V V uA uA V V Test Conditions IC=-100uA , IE= 0 IC=-1mA, IB=0 IE.


GTM GJ772

=-10uA ,IC=0 VCB=-30V, IE=0 VEB=-3V, IC= 0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE =-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, IE=0, f=1 MHz * Pulse Test: Pulse Width 380 s, Du ty Cycle 2% MHz pF Classification Of hFE2 Rank Range Q 100 - 200 P 160 - 320 E 250 - 500 GJ772 Page: 1/3 ISSUED DATE :2002/12/13 REVISED DATE :2005/08 /10B Characterist.

Part

GJ772

Description

PNP EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2002/12 /13 REVISED DATE :2005/08/10B GJ772 De scription P NP EP ITAXI AL PL ANAR T R ANSI STOR The GJ772 is designed for us ing in output stage of 10W amplifier, v oltage regulator, DC-DC converter and r elay driver. Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. M ax. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.7.
Manufacture

GTM

Datasheet
Download GJ772 Datasheet




 GJ772
www.DataSheet4U.com
ISSUED DATE :2002/12/13
REVISED DATE :2005/08/10B
GJ772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GJ772 is designed for using in output stage of 10W amplifier, voltage regulator, DC-DC converter and
relay driver.
Package Dimensions
TO-252
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Power Dissipation(TC=25 )
PD
Electrical Characteristics (Ta = 25 )
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
Min. Typ. Max.
-40 -
-
-30 -
-
-5 -
-
- - -1
- - -1
- -0.3 -0.5
*VBE(sat)
- -1 -2
*hFE1
*hFE2
fT
Cob
30 -
-
100 - 500
- 80 -
- 55 -
Unit
V
V
V
uA
uA
V
V
MHz
pF
Classification Of hFE2
Rank
Q
Range
100 - 200
P
160 - 320
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
+150
-55~+150
-40
-30
-5
-3
-7
-0.6
10
Unit
V
V
V
A
A
A
W
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-10uA ,IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
E
250 - 500
GJ772
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 GJ772
Characteristics Curve
ISSUED DATE :2002/12/13
REVISED DATE :2005/08/10B
GJ772
Page: 2/3




 GJ772
ISSUED DATE :2002/12/13
REVISED DATE :2005/08/10B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ772
Page: 3/3






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