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POWER MOSFET. GJ80N03 Datasheet

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POWER MOSFET. GJ80N03 Datasheet






GJ80N03 MOSFET. Datasheet pdf. Equivalent




GJ80N03 MOSFET. Datasheet pdf. Equivalent





Part

GJ80N03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/22 REVISED DA TE : GJ80N03 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 30V 8 m 80A The GJ80N03 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The TO-252 package is universally preferre d for all commerci.
Manufacture

GTM

Datasheet
Download GJ80N03 Datasheet


GTM GJ80N03

GJ80N03; al-industrial surface mount applications and suited for low voltage application s such as DC/DC converters. Descriptio n Features *Low On-resistance *Simple Drive Requirement *Fast Switching Char acteristic Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max . 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3. 00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Mil.


GTM GJ80N03

limeter Min. Max. 0.50 0.70 2.20 2.40 0. 45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Paramet er Drain-Source Voltage Gate-Source Vol tage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulse d Drain Current 1 Symbol VDS VGS ID @T C=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 30 ±20 80 50 315 83.3 0.67 -5 5 ~ +150 Unit V V .


GTM GJ80N03

A A A W W/ Total Power Dissipation Line ar Derating Factor Operating Junction a nd Storage Temperature Range Thermal D ata Parameter Thermal Resistance Juncti on-case Thermal Resistance Junction-amb ient Max. Max. Symbol Rthj-c Rthj-a Val ue 1.5 110 Unit /W /W GJ80N03 Page: 1 /5 ISSUED DATE :2005/11/22 REVISED DAT E : Electrical Characteristics (Tj = 2 5 Parameter Drain-.

Part

GJ80N03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/22 REVISED DA TE : GJ80N03 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 30V 8 m 80A The GJ80N03 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The TO-252 package is universally preferre d for all commerci.
Manufacture

GTM

Datasheet
Download GJ80N03 Datasheet




 GJ80N03
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/22
REVISED DATE :
GJ80N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
8m
80A
Description
The GJ80N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low On-resistance
*Simple Drive Requirement
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
30
±20
80
50
315
83.3
0.67
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.5
110
Unit
/W
/W
GJ80N03
Page: 1/5




 GJ80N03
ISSUED DATE :2005/11/22
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.035
-
50
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=40A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
7 8 m VGS=10V, ID=40A
10 12
VGS=4.5V, ID=32A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 42 -
ID=40A
Qgs - 5.2 - nC VDS=24V
Qgd - 26 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 9.9 -
- 100 -
- 37 -
- 60 -
VDS=15V
ID=40A
ns VGS=10V
RG=3.3
RD=0.37
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1950 -
- 895 -
- 315 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
80
315
Unit Test Conditions
V IS=80A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ80N03
Page: 2/5




 GJ80N03
Characteristics Curve
ISSUED DATE :2005/11/22
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GJ80N03
Fig 6. Type Power Dissipation
Page: 3/5






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