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EPITAXIAL TRANSISTOR. GJ8550 Datasheet

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EPITAXIAL TRANSISTOR. GJ8550 Datasheet






GJ8550 TRANSISTOR. Datasheet pdf. Equivalent




GJ8550 TRANSISTOR. Datasheet pdf. Equivalent





Part

GJ8550

Description

PNP EPITAXIAL TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GJ8550 Description Features PNP EPITAXIAL TRAN SISTOR ISSUED DATE :2005/05/06 REVISED DATE : The GJ8550 is designed for use in 2W output amplifier of portable rad ios in class B push-pull operation. *Hi gh Collector current (IC: 1.5A) *Comple mentary to GJ8050 Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.8.
Manufacture

GTM

Datasheet
Download GJ8550 Datasheet


GTM GJ8550

GJ8550; 0 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF . 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5 .80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base V oltage Collector to Emitter Voltage Emi tter to Base Voltage Collect Current Ba se Current Junction Temperature Storage Temperature Range.


GTM GJ8550

Total Power Dissipation , unless other wise specified) Symbol Ratings VCBO -40 VCEO -25 VEBO -6 IC -1.5 IB -0.5 Tj +1 50 TsTG -55 ~ +150 PD 1.25 Unit V V V A A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hF E2 *hFE3 fT Cob Min. -40 -25 -6 45 120 40 100 Typ. 9 , unless otherwise speci fied) Max. Unit Te.


GTM GJ8550

st Conditions V IC=-100uA V IC=-2mA V IE =-100uA -100 nA VCB=-35V -100 nA VBE=-6 V -0.5 V lC=-800mA, IB=-80mA -1.2 V lC= -800mA, IB=-80mA -1 V VCE=-1V, IC=-10mA VCE=-1V, IC=-5mA 500 VCE=-1V, IC=-100m A VCE=-1V, IC=-800mA MHz VCE=-10V, IC=- 50mA, f=100MHz pF VCB=-10V, IE=0, f=1MH z * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE2 Rank Range C 120 ~ 200.

Part

GJ8550

Description

PNP EPITAXIAL TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GJ8550 Description Features PNP EPITAXIAL TRAN SISTOR ISSUED DATE :2005/05/06 REVISED DATE : The GJ8550 is designed for use in 2W output amplifier of portable rad ios in class B push-pull operation. *Hi gh Collector current (IC: 1.5A) *Comple mentary to GJ8050 Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.8.
Manufacture

GTM

Datasheet
Download GJ8550 Datasheet




 GJ8550
www.DataSheet4U.com
CORPORATION ISSUED DATE :2005/05/06
REVISED DATE :
GJ8550
PNP EPITAXIAL TRANSISTOR
Description
The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
Features
*High Collector current (IC: 1.5A)
*Complementary to GJ8050
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
-40
Collector to Emitter Voltage
VCEO
-25
Emitter to Base Voltage
VEBO
-6
Collect Current
IC -1.5
Base Current
IB -0.5
Junction Temperature
Tj +150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD 1.25
Unit
V
V
V
A
A
W
Electrical Characteristics (Ta = 25 , unless otherwise specified)
Symbol
Min. Typ. Max.
Unit
Test Conditions
BVCBO
-40 -
-
V IC=-100uA
BVCEO
-25 -
-
V IC=-2mA
BVEBO
-6 -
-
V IE=-100uA
ICBO
-
- -100
nA VCB=-35V
IEBO
-
- -100
nA VBE=-6V
*VCE(sat)
- - -0.5 V lC=-800mA, IB=-80mA
*VBE(sat)
- - -1.2 V lC=-800mA, IB=-80mA
*VBE(on)
- - -1
V VCE=-1V, IC=-10mA
*hFE1
45 -
-
VCE=-1V, IC=-5mA
*hFE2
120 - 500
VCE=-1V, IC=-100mA
*hFE3
40 -
-
VCE=-1V, IC=-800mA
fT
100 -
-
MHz
VCE=-10V, IC=-50mA, f=100MHz
Cob
-9-
pF VCB=-10V, IE=0, f=1MHz
Classification Of hFE2
* Pulse Test: Pulse Width 380 s, Duty Cycle
Rank
C
D
E
Range
120 ~ 200
160 ~ 300
250 ~ 500
2%
GJ8550
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 GJ8550
Characteristics Curve
CORPORATION ISSUED DATE :2005/05/06
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ8550
Page: 2/2










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