DatasheetsPDF.com

POWER MOSFET. GJ88LS02 Datasheet

DatasheetsPDF.com

POWER MOSFET. GJ88LS02 Datasheet






GJ88LS02 MOSFET. Datasheet pdf. Equivalent




GJ88LS02 MOSFET. Datasheet pdf. Equivalent





Part

GJ88LS02

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/01/05 REVISED DA TE : GJ88LS02 N-CHANNEL ENHANCEMENT MO DE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A Description The GJ88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-252 package is universally preferred for al l commercial-indus.
Manufacture

GTM

Datasheet
Download GJ88LS02 Datasheet


GTM GJ88LS02

GJ88LS02; trial surface mount applications and sui ted for low voltage applications such a s DC/DC converters. *Low Gate Charge *S imple Drive Requirement *Fast Switching Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max . 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3. 00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.5 0 0.70 2.20 2.40 0.


GTM GJ88LS02

.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Paramet er Drain-Source Voltage Gate-Source Vol tage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pul sed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tst g Ratings 25 ±20 75 62.5 350 96 0.75 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation L.


GTM GJ88LS02

inear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junc tion-case Thermal Resistance Junction-a mbient Max. Max. Symbol Rthj-case Rthj- amb Value 1.3 110 Unit /W /W GJ88LS02 Page: 1/4 ISSUED DATE :2006/01/05 REV ISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakd own Voltage Breakd.

Part

GJ88LS02

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/01/05 REVISED DA TE : GJ88LS02 N-CHANNEL ENHANCEMENT MO DE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A Description The GJ88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-252 package is universally preferred for al l commercial-indus.
Manufacture

GTM

Datasheet
Download GJ88LS02 Datasheet




 GJ88LS02
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/05
REVISED DATE :
GJ88LS02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
5m
75A
Description
The GJ88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast
switching performance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@4.5V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
25
±20
75
62.5
350
96
0.75
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.3
110
Unit
/W
/W
GJ88LS02
Page: 1/4




 GJ88LS02
ISSUED DATE :2006/01/05
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.02
-
29
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=30A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 100 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
-
-
5 m VGS=10V, ID=45A
7 VGS=4.5V, ID=30A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 28 45
ID=30A
Qgs - 5 - nC VDS=20V
Qgd - 19 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 10 -
VDS=15V
Tr
Td(off)
-
-
80
37
-
-
ID=30A
ns VGS=10V
RG=3.3
Tf - 85 -
RD=0.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2070 3310
VGS=0V
- 990 -
pF VDS=25V
- 300 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
50
51
Max.
1.3
-
-
Unit Test Conditions
V IS=45A, VGS=0V
ns IS=30A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ88LS02
Page: 2/4




 GJ88LS02
Characteristics Curve
ISSUED DATE :2006/01/05
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ88LS02
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






Recommended third-party GJ88LS02 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)