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GJ9435 Datasheet, Equivalent, POWER MOSFET.P-CHANNEL ENHANCEMENT MODE POWER MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Part | GJ9435 |
|---|---|
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE : GJ9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50m -20A The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-252 package is universally used for commercial-industrial applications. *Simple Drive Requirement *Lower Gate Charge *Fast Switching Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70. |
| Manufacture | GTM |
| Datasheet |
| Part | GJ9435 |
|---|---|
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE : GJ9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50m -20A The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-252 package is universally used for commercial-industrial applications. *Simple Drive Requirement *Lower Gate Charge *Fast Switching Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70. |
| Manufacture | GTM |
| Datasheet |
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