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POWER MOSFET. GJ9435 Datasheet

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POWER MOSFET. GJ9435 Datasheet






GJ9435 MOSFET. Datasheet pdf. Equivalent




GJ9435 MOSFET. Datasheet pdf. Equivalent





Part

GJ9435

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/02/23 REVISED DA TE : GJ9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 5 0m -20A The GJ9435 utilized advanced p rocessing techniques to achieve the low est possible on-resistance, extremely e fficient and cost-effectiveness device. The TO-252 package is universally used for commercial-in.
Manufacture

GTM

Datasheet
Download GJ9435 Datasheet


GTM GJ9435

GJ9435; dustrial applications. *Simple Drive Req uirement *Lower Gate Charge *Fast Switc hing Description Features Package Di mensions TO-252 REF. A B C D E F S Mi llimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millime ter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1. 20 Absolute Maxim.


GTM GJ9435

um Ratings Parameter Drain-Source Voltag e Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC =25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -30 ±20 -20 -13 -72 31 0.25 -5 5 ~ +150 Unit V V A A A W W/ Total Po wer Dissipation Linear Derating Factor Operating Junction and Storage Temperat ure Range Thermal .


GTM GJ9435

Data Parameter Thermal Resistance Juncti on-case Thermal Resistance Junction-amb ient Max. Max. Symbol Rthj-case Rthj-am b Value 4.0 110 Unit /W /W GJ9435 Pag e: 1/4 ISSUED DATE :2005/02/23 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature C oefficient unless otherwise specified) Min. -30 -1.0 Typ.

Part

GJ9435

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/02/23 REVISED DA TE : GJ9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 5 0m -20A The GJ9435 utilized advanced p rocessing techniques to achieve the low est possible on-resistance, extremely e fficient and cost-effectiveness device. The TO-252 package is universally used for commercial-in.
Manufacture

GTM

Datasheet
Download GJ9435 Datasheet




 GJ9435
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/02/23
REVISED DATE :
GJ9435
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
50m
-20A
Description
The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The TO-252 package is universally used for commercial-industrial applications.
Features
*Simple Drive Requirement
*Lower Gate Charge
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VDS
VGS
ID @TC=25
Continuous Drain Current
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
Linear Derating Factor
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-30
±20
-20
-13
-72
31
0.25
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
4.0
110
Unit
/W
/W
GJ9435
Page: 1/4




 GJ9435
ISSUED DATE :2005/02/23
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-30
-
-1.0
-
-
- - V VGS=0, ID=-250uA
-0.1 - V/ Reference to 25 , ID=-1mA
- -3.0 V VDS=VGS, ID=-250uA
9.6 -
S VDS=-10V, ID=-10A
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 50 m VGS=-10V, ID=-10A
- 90
VGS=-4.5V, ID=-5A
10 16
ID=-10A
3 - nC VDS=-24V
5-
VGS=-4.5V
9.6 -
18 -
19 -
14 -
VDS=-15V
ID=-10A
ns VGS=-10V
RG=3.3
RD=1.5
463 740
187 -
140 -
VGS=0V
pF VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
34
30
Max.
-1.2
-
-
Unit Test Conditions
V IS=-10A, VGS=0V
ns IS=-10A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
GJ9435
Page: 2/4




 GJ9435
Characteristics Curve
ISSUED DATE :2005/02/23
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ9435
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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