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POWER MOSFET. GJ9912 Datasheet

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POWER MOSFET. GJ9912 Datasheet






GJ9912 MOSFET. Datasheet pdf. Equivalent




GJ9912 MOSFET. Datasheet pdf. Equivalent





Part

GJ9912

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/01/31 REVISED DA TE : GJ9912 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85 m 10A The GJ9912 provide the designer with the best combination of fast switc hing, ruggedized device design, low on- resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GJ9912 Datasheet


GTM GJ9912

GJ9912; l-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Driv e Requirement *Low Gate Charge *Fast Sw itching Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5. 50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0 .90 0.60 0.90 REF. G H J K L M R Mill imeter Min. Max. 0.


GTM GJ9912

.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Max imum Ratings Parameter Drain-Source Vol tage Gate-Source Voltage Continuous Dra in Current, VGS@10V Continuous Drain Cu rrent, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 20 ±12 10 7 20 18 0.144 -55 ~ +150 Unit V V A A A W W/ Total Powe.


GTM GJ9912

r Dissipation Linear Derating Factor Ope rating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resist ance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 6.6 110 Unit /W /W GJ9912 Page: 1/5 ISSUED DATE :2005/0 1/31 REVISED DATE : Electrical Charact eristics (Tj = 25 Parameter Drain-Sourc e Breakdown Voltag.

Part

GJ9912

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/01/31 REVISED DA TE : GJ9912 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85 m 10A The GJ9912 provide the designer with the best combination of fast switc hing, ruggedized device design, low on- resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GJ9912 Datasheet




 GJ9912
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/01/31
REVISED DATE :
GJ9912
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
85m
10A
Description
The GJ9912 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
20
±12
10
7
20
18
0.144
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
6.6
110
Unit
/W
/W
GJ9912
Page: 1/5




 GJ9912
ISSUED DATE :2005/01/31
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
20
-
0.5
-
-
-
0.025
-
9
-
-
-
-
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=5V, ID=5A
nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 25 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 85 m VGS=4.5V, ID=5A
- 180
VGS=2.5V, ID=3A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 4.3 -
ID=5A
Qgs - 0.7 - nC VDS=16V
Qgd - 2.2 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 3.1 -
- 17.1 -
- 13.9 -
- 2.6 -
VDS=16V
ID=5A
ns VGS=4.5V
RG=3.3
RD=3.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 135 -
- 75 -
- 35 -
VGS=0V
pF VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
10
20
Unit Test Conditions
V IS=10A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ9912
Page: 2/5




 GJ9912
Characteristics Curve
ISSUED DATE :2005/01/31
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GJ9912
Fig 6. Type Power Dissipation
Page: 3/5






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