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POWER MOSFET. GJ9916 Datasheet

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POWER MOSFET. GJ9916 Datasheet






GJ9916 MOSFET. Datasheet pdf. Equivalent




GJ9916 MOSFET. Datasheet pdf. Equivalent





Part

GJ9916

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GJ9916 Datasheet


GTM GJ9916

GJ9916; www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2004/05/24 REVISED DA TE :2005/03/04B GJ9916 N-CHANNEL ENHAN CEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25m 35A The GJ9916 provide th e designer with the best combination of fast switching, ruggedized device desi gn, ultra low on-resistance and cost-ef fectiveness. *Single Drive Requirement *Low on-resistance.


GTM GJ9916

*Capable of 2.5V gate drive *Low drive current Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5. 50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0 .90 0.60 0.90 REF. G H J K L M R Mill imeter Min. Max. 0.50 0.70 2.20 2.40 0. 45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Paramet er Drain-Source Vo.


GTM GJ9916

ltage Gate-Source Voltage Continuous Dra in Current, VGS@4.5V Continuous Drain C urrent, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=125 I DM PD @TC=25 Tj, Tstg Ratings 18 ±12 35 16 90 50 0.4 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linea r Derating Factor Operating Junction an d Storage Temperature Range Thermal Da ta Parameter Therma.



Part

GJ9916

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GJ9916 Datasheet




 GJ9916
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2004/05/24
REVISED DATE :2005/03/04B
GJ9916
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
18V
25m
35A
Description
The GJ9916 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Single Drive Requirement
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@4.5V
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=125
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
18
±12
35
16
90
50
0.4
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
2.5
110
Unit
/W
/W
GJ9916
Page: 1/5





 GJ9916
ISSUED DATE :2004/05/24
REVISED DATE :2005/03/04B
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
18
-
0.5
-
-
-
0.03
-
18
-
-
-
1.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=6A
nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=125 )
IDSS
-
-
- 25 uA VDS=18V, VGS=0
- 250 uA VDS=18V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 25 m VGS=4.5V, ID=6A
- 40
VGS=2.5V, ID=5.2A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 17.5 -
ID=18A
Qgs - 1.2 - nC VDS=18V
Qgd - 7.9 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 7.3 -
- 98 -
- 25.6 -
- 98 -
VDS=10V
ID=18A
ns VGS=5V
RG=3.3
RD=0.56
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 527 -
- 258 -
- 112 -
VGS=0V
pF VDS=18V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
35
90
Unit Test Conditions
V IS=35A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ9916
Page: 2/5





 GJ9916
Characteristics Curve
ISSUED DATE :2004/05/24
REVISED DATE :2005/03/04B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GJ9916
Fig 6. Type Power Dissipation
Page: 3/5



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