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POWER MOSFET. GJ9962 Datasheet

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POWER MOSFET. GJ9962 Datasheet






GJ9962 MOSFET. Datasheet pdf. Equivalent




GJ9962 MOSFET. Datasheet pdf. Equivalent





Part

GJ9962

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/16 REVISED DA TE : GJ9962 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 20 m 32A The GJ9962 provide the designer with the best combination of fast switc hing, ruggedized device design, low on- resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GJ9962 Datasheet


GTM GJ9962

GJ9962; l-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Low On-resistance *Single Drive Requirement Package Dimensions T O-252 REF. A B C D E F S Millimeter M in. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. M ax. 0.50 0.70 2.20.


GTM GJ9962

2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5. 80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Sou rce Voltage Continuous Drain Current, V GS@10V Continuous Drain Current, VGS@10 V Pulsed Drain Current 1 Symbol VDS VG S ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj , Tstg Ratings 40 ±20 32 20 150 34.7 0.27 -55 ~ +150 Unit V V A A A W W/ T otal Power Dissipat.


GTM GJ9962

ion Linear Derating Factor Operating Jun ction and Storage Temperature Range Th ermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junct ion-ambient Max. Max. Symbol Rthj-c Rth j-a Value 4.5 110 Unit /W /W GJ9962 P age: 1/4 ISSUED DATE :2005/11/16 REVIS ED DATE : Electrical Characteristics ( Tj = 25 Parameter Drain-Source Breakdow n Voltage Breakdow.

Part

GJ9962

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/16 REVISED DA TE : GJ9962 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 40V 20 m 32A The GJ9962 provide the designer with the best combination of fast switc hing, ruggedized device design, low on- resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GJ9962 Datasheet




 GJ9962
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/16
REVISED DATE :
GJ9962
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
40V
20m
32A
Description
The GJ9962 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low On-resistance
*Single Drive Requirement
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
40
±20
32
20
150
34.7
0.27
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
4.5
110
Unit
/W
/W
GJ9962
Page: 1/4




 GJ9962
ISSUED DATE :2005/11/16
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
40
-
1.0
-
-
- - V VGS=0, ID=250uA
0.1 - V/ Reference to 25 , ID=1mA
- 3.0 V VDS=VGS, ID=250uA
19 -
S VDS=10V, ID=20A
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=40V, VGS=0
- 25 uA VDS=32V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 20 m VGS=10V, ID=20A
- 30
VGS=4.5V, ID=16A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 13 21
ID=20A
Qgs - 5 - nC VDS=32V
Qgd - 8 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
8
-
VDS=20V
Tr
Td(off)
-
-
38
20
-
-
ID=20A
ns VGS=10V
RG=3.3
Tf - 5 -
RD=1.0
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1170 1870
VGS=0V
- 180 -
pF VDS=25V
- 115 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24
14
Max.
1.2
-
-
Unit Test Conditions
V IS=32A, VGS=0V
ns IS=20A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
GJ9962
Page: 2/4




 GJ9962
Characteristics Curve
ISSUED DATE :2005/11/16
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ9962
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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