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Centertap Rectifier. SSR40C30CT Datasheet

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Centertap Rectifier. SSR40C30CT Datasheet






SSR40C30CT Rectifier. Datasheet pdf. Equivalent




SSR40C30CT Rectifier. Datasheet pdf. Equivalent





Part

SSR40C30CT

Description

(SSR40C20CT / SSR40C30CT) Schottky Silicon Carbide Centertap Rectifier



Feature


www.DataSheet4U.com Solid State Devices , Inc. 14830 Valley View Blvd * La Mira da, Ca 90638 Phone: (562) 404-7855 * Fa x: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com World’s First Si licon Carbide Centertap Rectifier SSR40 C30CT Series 40A / 300V Schottky Silico n Carbide Centertap Rectifier Features: • • • • • • • World's 1s t Hermetic 40A SiC Centertap Recti.
Manufacture

SSDI

Datasheet
Download SSR40C30CT Datasheet


SSDI SSR40C30CT

SSR40C30CT; fier High Voltage 300V Very High Operati ng Temperature, 250ºC No Recovery Time (tfr or trr) High Current Operation, 4 0A Hermetic Packaging TX, TXV, S Level screening available • Higher Voltage upon Request DESIGNER’S DATA SHEET P art Number / Ordering Information 1/ SS R40C 30 CT S.5 TX │ │ │ └ Scree ning __ = Not Screened │ │ │ TV = TX Level │ │ │ TXV= TXV Level │ │ │ .


SSDI SSR40C30CT

S = S Level │ │ └ Package 2/ S.5 = SMD.5 │ │ G = Cerpack │ │ M = TO-254 │ └ Configuration CT = Cente rtap │ └ Voltage 20 = 200 V 30 = 30 0 V Maximum Ratings Symbol Value Un its Peak Repetitive and Peak Surge Rev erse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wav e) Non Repetitive Peak Surge Current (8 .3 ms Pulse, Half Sine Wave Superimposed.


SSDI SSR40C30CT

on IO, per leg) Power Dissipation Opera ting & Storage Temperature Maximum Ther mal Resistance Junction to Case TO-254 (M) SSR40C20 SSR40C30 Per Leg Total V RRM VRSM Io IFSM PD Top & Tstg 200 300 20 40 36 60 45 -55 to +250 1.3 1.6 Vo lts Amps Amps Watts ºC ºC/W S.5 & G Package M Package S.5 & G Package M Pa ckage Cerpack (G) RθJC SMD .5 (S.5) 1 NOTE: All specific.

Part

SSR40C30CT

Description

(SSR40C20CT / SSR40C30CT) Schottky Silicon Carbide Centertap Rectifier



Feature


www.DataSheet4U.com Solid State Devices , Inc. 14830 Valley View Blvd * La Mira da, Ca 90638 Phone: (562) 404-7855 * Fa x: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com World’s First Si licon Carbide Centertap Rectifier SSR40 C30CT Series 40A / 300V Schottky Silico n Carbide Centertap Rectifier Features: • • • • • • • World's 1s t Hermetic 40A SiC Centertap Recti.
Manufacture

SSDI

Datasheet
Download SSR40C30CT Datasheet




 SSR40C30CT
www.DataSheet4U.com
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SSR40C 30 CT S.5 TX
│ │ │ └ Screening __ = Not Screened
│││
TV = TX Level
│││
TXV= TXV Level
│││
S = S Level
│ │ └ Package 2/ S.5 = SMD.5
││
G = Cerpack
││
M = TO-254
│ └ Configuration CT = Centertap
Voltage 20 = 200 V
30 = 300 V
World’s First Silicon Carbide
Centertap Rectifier
SSR40C30CT Series
40A / 300V
Schottky Silicon Carbide
Centertap Rectifier
Features:
World's 1st Hermetic 40A SiC Centertap Rectifier
High Voltage 300V
Very High Operating Temperature, 250ºC
No Recovery Time (tfr or trr)
High Current Operation, 40A
Hermetic Packaging
TX, TXV, S Level screening available
Higher Voltage upon Request
Maximum Ratings
Peak Repetitive and Peak Surge Reverse Voltage
SSR40C20
SSR40C30
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Per Leg
Total
Non Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on IO, per leg)
Power Dissipation
S.5 & G Package
M Package
Operating & Storage Temperature
Symbol
VRRM
VRSM
Io
IFSM
PD
Top & Tstg
Value
200
300
20
40
36
60
45
-55 to +250
Units
Volts
Amps
Amps
Watts
ºC
Maximum Thermal Resistance
Junction to Case
S.5 & G Package
M Package
RθJC
1.3
1.6
1
TO-254 (M)
Cerpack (G)
SMD .5 (S.5)
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0024D
DOC




 SSR40C30CT
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
World’s First Silicon Carbide
Centertap Rectifier
SSR40C30CT Series
Electrical Characteristic (Per Leg)
Instantaneous Forward Voltage Drop
(Tj = 25ºC, 300 – 500 µsec pulse)
Instantaneous Forward Voltage Drop
(Tj = 150ºC, 300 – 500 µsec pulse)
Instantaneous Forward Voltage Drop
(Tj = -55ºC, 300 – 500 µsec pulse)
Reverse Leakage Current
(Vr = Rated Vr, Tj = 25ºC, 300 µsec min pulse)
Reverse Leakage Current
(Vr = Rated Vr, Tj = 150ºC, 300 µsec min pulse)
Junction Capacitance
(Vr=10 Vdc, Tc=25ºC, f=1MHz)
Total Capacitive Charge
(VR = 400V, IF = 5A, di/dt = 200A/µs, TJ = 150ºC)
Symbol
If = 10A
If = 20A
If = 10A
If = 20A
If = 10A
If = 20A
Vf1
Vf2
Vf3
Vf4
Vf5
Vf6
Ir1
Ir2
Cj
Qc
Min
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Typ
1.25
1.57
1.22
1.55
1.35
1.60
50
200
700
26
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ For Package Outlines Contact Factory.
3/ All Electrical Characteristics @25oC Unless Otherwise Specified.
4/ If High Temperature Operation is Desired (> 175oC) Consult Factory for Soldering Consideration.
Max
1.35
1.70
1.30
1.80
1.45
1.75
200
500
1000
---
Units
Volts
Volts
Volts
µA
µA
pF
nC
Available Part Numbers:
SSR40C20CTS.5 SSR40C20CTG SSR40C20CTM
SSR40C30CTS.5 SSR40C30CTG SSR40C30CTM
Package
SMD .5 (S.5)
Cerpack (G)
TO-254 (M)
PIN ASSIGNMENT
Pin 1
Pin 2
Cathode Anode
Anode
Anode
Anode Cathode
Pin 3 (Tab)
Anode
Cathode
Anode










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