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N-CHANNEL MOSFET. STN3NE06 Datasheet

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N-CHANNEL MOSFET. STN3NE06 Datasheet






STN3NE06 MOSFET. Datasheet pdf. Equivalent




STN3NE06 MOSFET. Datasheet pdf. Equivalent





Part

STN3NE06

Description

N-CHANNEL MOSFET



Feature


www.DataSheet4U.com ® STN3NE06 N - CH ANNEL 60V - 0.08Ω - 3A - SOT-223 STri pFET™ POWER MOSFET TYPE ST N3NE06 s s s s s V DSS 60 V R DS(on) < 0.100 ID 3 A TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTE D APPLICATION ORIENTED CHARACTERIZATION 2 3 DESCRIPTION This Power Mosfet is the latest development of .
Manufacture

STMicroelectronics

Datasheet
Download STN3NE06 Datasheet


STMicroelectronics STN3NE06

STN3NE06; STMicroelectronics unique ”Single Feat ure Size™ ” stip-based process. The resulting transistor shows extremely h igh packing density for low on-resistan ce, rugged avalanche characteristics an d less critical alignment steps therefo re a remarkable manufacturing reproduci bility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CON VERTERS s SYNCHRONOUS RE.


STMicroelectronics STN3NE06

CTIFICATION 1 SOT-223 2 INTERNAL SCHE MATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P to t dv/dt( 1 ) T st g Tj Paramet er Drain-source Voltage (VGS = 0) Drain - gate Voltage (RGS = 20 k Ω ) Gate-s ource Voltage Drain Current (continuous ) at T c = 25 C Drain Current (continuo us) at T c = 100 C Drain Current (pulse d) Total Dissipation a.


STMicroelectronics STN3NE06

t Tc = 25 C Derating Factor Peak Diode R ecovery voltage slope Storage Temperatu re Max. Operating Junction T emperature o o o Value 60 60 ± 20 3 1.8 12 2.5 0.02 6 -65 to 150 150 (1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C ( •) Pulse width lim ited by safe operating area New RDS (on ) spec. starting from JULY 98 .

Part

STN3NE06

Description

N-CHANNEL MOSFET



Feature


www.DataSheet4U.com ® STN3NE06 N - CH ANNEL 60V - 0.08Ω - 3A - SOT-223 STri pFET™ POWER MOSFET TYPE ST N3NE06 s s s s s V DSS 60 V R DS(on) < 0.100 ID 3 A TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTE D APPLICATION ORIENTED CHARACTERIZATION 2 3 DESCRIPTION This Power Mosfet is the latest development of .
Manufacture

STMicroelectronics

Datasheet
Download STN3NE06 Datasheet




 STN3NE06
www.DataSheet4U.com
® STN3NE06
N - CHANNEL 60V - 0.08- 3A - SOT-223
STripFETPOWER MOSFET
TYPE
ST N3NE06
VDSS
60 V
RDS(on)
< 0.100
ID
3A
s TYPICAL RDS(on) = 0.08
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” stip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V D GR
V GS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tst g St orage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
New RDS (on) spec. starting from JULY 98
August 1998
Va l u e
Unit
60 V
60 V
± 20
V
3A
1.8 A
12 A
2 .5
0.02
W
W/oC
6 V/ns
-65 to 150
oC
150 oC
(1) ISD 12 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
1/9




 STN3NE06
STN3NE06
THERMAL DATA
Rthj-pcb
Rt hj- amb
Tl
Thermal Resistance Junction-PC Board
Thermal Resistance Junction-ambient
(Surface Mounted)
Maximum Lead Temperature For Soldering
Purpose
Max
Max
50
60
260
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 25 V)
Max Valu e
3
20
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
60
Typ .
Max.
Unit
V
1 µA
10 µA
± 100 nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 6A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2
Typ .
3
Max.
4
Unit
V
0.080 0.100
3A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.5 A
Min.
1
Typ .
3
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0 V
760 1000
100 140
30 45
pF
pF
pF
2/9




 STN3NE06
STN3NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
Qg
Qgs
Qgd
P a ra m et er
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG = 4.7
VDD = 40 V
ID = 6 A
VGS = 10 V
ID = 12 A VGS = 10 V
Min.
Typ .
10
35
20
5
7
Max.
15
50
25
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 12 A
RG = 4.7 W VGS = 10 V
Min.
Typ .
7
18
30
Max.
10
25
45
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 3 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 12 A
VDD = 30 V
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ .
Max.
3
12
Unit
A
A
65
0.18
5.5
1.5
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9






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