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N-CHANNEL MOSFET. STN3NF06L Datasheet

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N-CHANNEL MOSFET. STN3NF06L Datasheet






STN3NF06L MOSFET. Datasheet pdf. Equivalent




STN3NF06L MOSFET. Datasheet pdf. Equivalent





Part

STN3NF06L

Description

N-CHANNEL MOSFET



Feature


STN3NF06L N-channel 60 V, 0.07 Ω typ., 4 A STripFET™ II Power MOSFET in a S OT-223 package Datasheet - production d ata Figure 1: Internal schematic diagr am Features Order code STN3NF06L VDS 60 V RDS(on) max. 0.1 Ω ID 4A Exce ptional dv/dt capability 100% avalanch e tested Low threshold drive Applicati ons Switching applications Description This Power MOSFET ser.
Manufacture

STMicroelectronics

Datasheet
Download STN3NF06L Datasheet


STMicroelectronics STN3NF06L

STN3NF06L; ies realized with STMicroelectronics uni que STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-e fficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application wi th low gate charge drive requirements. Order code STN3NF06.


STMicroelectronics STN3NF06L

L Table 1: Device summary Marking Pac kage 3NF06L SOT-223 Packing Tape and reel July 2017 DocID7798 Rev 9 This is information on a product in full pr oduction. 1/12 www.st.com Contents Co ntents STN3NF06L 1 Electrical ratings ...... .


STMicroelectronics STN3NF06L

.

Part

STN3NF06L

Description

N-CHANNEL MOSFET



Feature


STN3NF06L N-channel 60 V, 0.07 Ω typ., 4 A STripFET™ II Power MOSFET in a S OT-223 package Datasheet - production d ata Figure 1: Internal schematic diagr am Features Order code STN3NF06L VDS 60 V RDS(on) max. 0.1 Ω ID 4A Exce ptional dv/dt capability 100% avalanch e tested Low threshold drive Applicati ons Switching applications Description This Power MOSFET ser.
Manufacture

STMicroelectronics

Datasheet
Download STN3NF06L Datasheet




 STN3NF06L
STN3NF06L
N-channel 60 V, 0.07 Ω typ., 4 A STripFET™ II
Power MOSFET in a SOT-223 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STN3NF06L
VDS
60 V
RDS(on) max.
0.1 Ω
ID
4A
Exceptional dv/dt capability
100% avalanche tested
Low threshold drive
Applications
Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
is specifically designed to minimize input
capacitance and gate charge. It is therefore ideal
as a primary switch in advanced high-efficiency
isolated DC-DC converters for Telecom and
Computer applications. It is also suitable for any
application with low gate charge drive
requirements.
Order code
STN3NF06L
Table 1: Device summary
Marking
Package
3NF06L
SOT-223
Packing
Tape and reel
July 2017
DocID7798 Rev 9
This is information on a product in full production.
1/12
www.st.com




 STN3NF06L
Contents
Contents
STN3NF06L
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 SOT-223 package information .......................................................... 9
5 Revision history ............................................................................ 11
2/12 DocID7798 Rev 9




 STN3NF06L
STN3NF06L
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID(1)
ID
IDM(2)
PTOT
dv/dt (3)
EAS(4)
Tj
Tstg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tc = 25 °C
Drain current (continuous) at Tc = 100 °C
Drain current (pulsed)
Total dissipation at Tpcb = 25 °C
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature range
Storage temperature range
Notes:
(1)Current limited by the package.
(2)Pulse width limited by safe operating area.
(3)ISD ≤ 3 A, di/dt ≤ 150 A/μs, VDD ≤ V(BR)DSS
(4)Starting Tj = 25 °C, ID = 4 A, VDD = 30 V
Symbol
Rthj-pcb
Rthj-pcb
Table 3: Thermal data
Parameter
Thermal resistance junction-pcb (1)
Thermal resistance junction-pcb(2)
Notes:
(1)When Mounted on FR-4 board 1 inch2 pad, 2 oz. of Cu and t <10 s.
(2)When mounted on minimum recommended footprint.
Electrical ratings
Value
60
±16
4
2.9
16
3.3
10
200
- 55 to 150
Unit
V
V
A
A
A
W
V/ns
mJ
°C
Value
38
100
Unit
°C/W
°C/W
DocID7798 Rev 9
3/12






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