STN1HNK60

STN1HNK60, STQ1HNK60R-AP Datasheet N-channel 600 V, 7.3 Ω typ., 0.4 A SuperMESH™ Power MOSFETs in a SOT-223 and TO-92 packages 4 1 23 SOT-223 3 2 1 TO-92 (Ammopack) D(2, 4) Features Order code VDS STN1HNK60 STQ1HNK60R-AP 600 V Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Applications Switching applications RDS(on) max. 8.5 Ω ID 0.4 A Package SOT-223 TO-92 Description G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant S(3) reduction in on-resistance, these devices are designed to ensure a high level of dv/dt Int_schem_nTnZ_SOT_223 capability for the most demanding applications. Product status STN1HNK60 STQ1HNK60R-AP DS12594 - Rev 1 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STN1HNK60, STQ1HNK60R-AP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate- source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating...