STN1N20

STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET Features Type VDSS RDS(on) max ID STN1N20 200 V < 1.5 Ω t(s)■ 100% avalanche tested 1A ucApplication rod■ Switching applications PDescription leteThis device is an N-channel Power MOSFET odeveloped using the latest high voltage MESH sOVERLAY™ process. The new patented STrip blayout coupled with the company’s proprietary Oedge termination structure, makes it suitable in ) -converters for lighting applications. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram $  roduct(s ' Obsolete P 3 !-V Table 1. Device summary Order code STN1N20 Marking N1N20 Package SOT-223 Packaging Tape and reel June 2011 Doc ID 6772 Rev 3 1/12 www.st.com 12 Contents Contents STN1N20 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 )4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Obsolete Product(s) - Obsolete Product(s5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 6772 Rev 3 STN1N20 1 Electrical...