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N-CHANNEL MOSFET. STN1NK60Z Datasheet

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N-CHANNEL MOSFET. STN1NK60Z Datasheet






STN1NK60Z MOSFET. Datasheet pdf. Equivalent




STN1NK60Z MOSFET. Datasheet pdf. Equivalent





Part

STN1NK60Z

Description

N-CHANNEL MOSFET



Feature


STN1NK60Z, STQ1NK60ZR N-channel 600 V, 1 3 Ω typ., 0.3 A Zener-protected SuperM ESH™ Power MOSFETs in SOT-223 and TO- 92 packages Datasheet - production data Features 4 3 2 1 SOT-223 TO-92 (Ammo pak) Figure 1. Internal schematic diag ram D(2,4) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STN1NK60 Z 600 V STQ1NK60ZR-AP 15 Ω 3.3 W 0. 3 A 3W • 100% avalanch.
Manufacture

STMicroelectronics

Datasheet
Download STN1NK60Z Datasheet


STMicroelectronics STN1NK60Z

STN1NK60Z; e tested • Extremely high dv/dt capabi lity • Gate charge minimized • ESD improved capability • Zener-protected Applications • Switching applicatio ns Description These devices are N-cha nnel Zener-protected Power MOSFETs deve loped using STMicroelectronics' SuperME SH™ technology, achieved through opti mization of ST's well established strip -based PowerMESH™ layout. In a.


STMicroelectronics STN1NK60Z

ddition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Order codes STN1NK60Z STQ1NK60ZR-AP Ta ble 1. Device summary Marking Package 1NK60Z 1NK60ZR SOT-223 TO-92 Packag ing Tape and reel Ammopak July 2014 Th is is information on a product in full production. DocID.


STMicroelectronics STN1NK60Z

9509 Rev 14 1/18 www.st.com Contents C ontents STN1NK60Z, STQ1NK60ZR 1 Elect rical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteri stics (curves) . . . . . . . . . . . . . . . . . . . . . .

Part

STN1NK60Z

Description

N-CHANNEL MOSFET



Feature


STN1NK60Z, STQ1NK60ZR N-channel 600 V, 1 3 Ω typ., 0.3 A Zener-protected SuperM ESH™ Power MOSFETs in SOT-223 and TO- 92 packages Datasheet - production data Features 4 3 2 1 SOT-223 TO-92 (Ammo pak) Figure 1. Internal schematic diag ram D(2,4) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STN1NK60 Z 600 V STQ1NK60ZR-AP 15 Ω 3.3 W 0. 3 A 3W • 100% avalanch.
Manufacture

STMicroelectronics

Datasheet
Download STN1NK60Z Datasheet




 STN1NK60Z
STN1NK60Z,
STQ1NK60ZR
N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH™
Power MOSFETs in SOT-223 and TO-92 packages
Datasheet - production data
Features
4
3
2
1
SOT-223
TO-92 (Ammopak)
Figure 1. Internal schematic diagram
D(2,4)
G(1)
S(3)
AM01476v1
Order codes
VDS RDS(on)max ID PTOT
STN1NK60Z
600 V
STQ1NK60ZR-AP
15
3.3 W
0.3 A
3W
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
ESD improved capability
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order codes
STN1NK60Z
STQ1NK60ZR-AP
Table 1. Device summary
Marking
Package
1NK60Z
1NK60ZR
SOT-223
TO-92
Packaging
Tape and reel
Ammopak
July 2014
This is information on a product in full production.
DocID9509 Rev 14
1/18
www.st.com




 STN1NK60Z
Contents
Contents
STN1NK60Z, STQ1NK60ZR
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 SOT-223, STN1NK60Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-92 ammopack, STQ1NK60ZR-AP . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18 DocID9509 Rev 14




 STN1NK60Z
STN1NK60Z, STQ1NK60ZR
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
SOT-223
TO-92
VDS
VGS
ID
ID
IDM(1)
PTOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
600
± 30
0.3
0.189
1.2
3.3 3
0.026
0.024
ESD
dv/dt(2)
Human body model
C=100 pF, R=1.5 kΩ
Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD 0.3 A, di/dt 200 A/µs, VDD = 80%V(BR)DSS
800
4.5
- 55 to 150
Table 3. Thermal resistance
Symbol
Parameter
Value
SOT-223
TO-92
Rthj-amb Thermal resistance junction-ambient max
Rthj-lead Thermal resistance junction-lead max
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu, t < 30 s.
38(1)
120
40
Symbol
IAR
EAS
Table 4. Avalanche data
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
0.3
60
Unit
V
V
A
A
A
W
W/°C
V
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID9509 Rev 14
3/18
18






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