STN690A
High performance low voltage NPN transistor
Features
■ Very low collector to emitter saturation voltage
■ DC ...
STN690A
High performance low voltage
NPN transistor
Features
■ Very low collector to emitter saturation voltage
■ DC current gain, hFE > 100 ■ 3 A continuous collector current
t(s)■ 40 V breakdown voltage V(BR)CER
■ SOT-223 plastic package for surface mounting
uccircuits in tape and reel packaging rodApplications te P■ Power management in portable equipment le■ Voltage regulation in bias supply circuits o■ Switching
regulator in battery charger sapplications Ob■ Heavy load driver t(s) -Description cThe device in manufactured in low voltage
NPN uplanar technology by using a “Base Island” layout. dThe resulting
transistor shows exceptional high rogain performance coupled with very low Obsolete Psaturation voltage.
4 3
2 1
SOT-223
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STN690A
N690A
Package SOT-223
Packaging Tape and reel
February 2009
Rev 2
1/9
www.st.com
9
Electrical ratings
1 Electrical ratings
STN690A
Table 2. Symbol
Absolute maximum ratings Parameter
Value
Unit
VCBO Collector-base voltage (IE = 0)
40 V
VCER Collector-emitter voltage (RBE = 47 Ω)
40 V
VCEO Collector-emitter voltage (IB = 0)
30 V
VEBO
)IC t(sICM ucPtot rodTstg PTJ
Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature
leteTable 3. Thermal data
soSymbol
Parameter
ObRthj-amb Thermal resistance junction-amb (1)_ Obsolete Pr...