C106F Datasheet: SCRs 4 AMPERES RMS 50 thru 600 VOLTS





C106F SCRs 4 AMPERES RMS 50 thru 600 VOLTS Datasheet

Part Number C106F
Description SCRs 4 AMPERES RMS 50 thru 600 VOLTS
Manufacture Motorola
Total Page 4 Pages
PDF Download Download C106F Datasheet PDF

Features: www.DataSheet4U.com SEMICONDUCTOR TECHNI CAL DATA MOTOROLA Order this document by C106/D Silicon Controlled Rectifie r Reverse Blocking Triode Thyristors . . . Glassivated PNPN devices designed f or high volume consumer applications su ch as temperature, light, and speed con trol; process and remote control, and w arning systems where reliability of ope ration is important. • • • • Gl assivated Surface for Reliability and U niformity Power Rated at Economical Pri ces Practical Level Triggering and Hold ing Characteristics Flat, Rugged, Therm opad Construction for Low Thermal Resis tance, High Heat Dissipation and Durabi lity C106 Series * *Motorola preferred devices SCRs 4 AMPERES RMS 50 thru 60 0 VOLTS G A K A G A K CASE 77-08 (TO-225AA) STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Ratin g Peak Repetitive Forward and Reverse B locking Voltage(1) (RGK = 1 kΩ) C106F (TC = –40° to 110°C) C106A C106B C 106D C106M RMS Forward Current (All Conduction Angles) Average Forward Current.

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MOTOROLA
www.DSatEaSMhIeCetO4UN.cDoUmCTOR TECHNICAL DATA
Silicon Controlled Rectifier
Reverse Blocking Triode Thyristors
. . . Glassivated PNPN devices designed for high volume consumer applications such
as temperature, light, and speed control; process and remote control, and warning
systems where reliability of operation is important.
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Order this document
by C106/D
C106
Series *
*Motorola preferred devices
SCRs
4 AMPERES RMS
50 thru 600 VOLTS
G
AK
A
G
AK
CASE 77-08
(TO-225AA)
STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(RGK = 1 k)
(TC = –40° to 110°C)
C106F
C106A
C106B
C106D
C106M
Symbol
VDRM
or
VRRM
Value
50
100
200
400
600
Unit
Volts
RMS Forward Current
(All Conduction Angles)
IT(RMS)
4
Amps
Average Forward Current
(TA = 30°C)
IT(AV) 2.55 Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to +110°C)
Circuit Fusing (t = 8.3 ms)
ITSM 20 Amps
I2t 1.65 A2s
Peak Gate Power
PGM 0.5 Watt
Average Gate Power
PG(AV)
0.1
Watt
Peak Forward Gate Current
IGFM
0.2
Amp
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a
constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1

           






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