NPN EPITAXIAL PLANAR SILICON TRANSISTOR
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ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B
GJSD1804
Description Features
NP N EP ITAXI AL P...
Description
www.DataSheet4U.com
ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B
GJSD1804
Description Features
NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R
The GJSD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. *Low collector-to-emitter saturation voltage *High current and high fT *Excellent linearity of hFE *Fast switching time
Package Dimensions
TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter
Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation
(Ta = 25 Tj Tstg VCBO VCEO VEBO IC IC PD Tc=25
, unless otherwise specified)
Symbol
Ratings
+150 -55 ~ +150 60 50 6 8 12 1 20
Unit
V V V A A W W
Electrical Characteristics (Ta = 25
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT tstg tf Cob Min. 60 50 6 70 35 Typ. 0.2 0.95 180 500 20 65
unless otherwise specified) Max. 1 1 0.4 1.3 400 MHZ ns ns pF Unit V V V uA uA V V IC=10uA, IE=0 IC=1mA, RBE= IE=10uA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 IC=4A, IB=0.2A IC=4A, IB=0.2A VCE=2V, IC=0.5A VCE=2V, IC=6A VCE=5V,IC=1A See test circuit See test circuit VCB=10V, f=1MHz Test Conditions
GJSD1804
P...
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