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PERFORMANCE TRANSISTOR. GL156 Datasheet

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PERFORMANCE TRANSISTOR. GL156 Datasheet






GL156 TRANSISTOR. Datasheet pdf. Equivalent




GL156 TRANSISTOR. Datasheet pdf. Equivalent





Part

GL156

Description

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL156 D escription Features ISSUED DATE :2004/ 12/29 REVISED DATE :2005/08/02B NPN SI LICON PLANAR HIGH PERFORMANCE TRANSISTO R The GL156 is designed for general pur pose switching and amplifier applicatio ns. 60 Volt VCEO 3 Amp continuous curre nt Low saturation voltage Package Dime nsions SOT-223 REF. A C D E I H Mill imeter Min. Max. 6.
Manufacture

GTM

Datasheet
Download GL156 Datasheet


GTM GL156

GL156; .70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0 .80 0.25 0.35 REF. B J 1 2 3 4 5 Mill imeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.4 0 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Sto rage Temperature Collector to Base Volt age Collector to Emitter Voltage Emitte r to Base Voltage Collector Current (DC ) Collector Curren.


GTM GL156

t (Pulse) Total Power Dissipation Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 * hFE2 *hFE3 *hFE4 fT ton toff Cob Min. 8 0 60 5 70 100 80 40 140 Typ. 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 Symbo l Tj Tstg VCBO VCEO VEBO IC IC PD Ratin gs +150 -55~+150 80 60 5 3 6 2 Unit V V V A A W Electrical Characteristics(T a = 25 ,unless ot.


GTM GL156

herwise noted) Max. Unit Test Conditions V IC=100uA, IE=0 V IC=10mA, IB=0 V IE= 100uA, IC=0 100 nA VCB=60V, IE=0 100 nA VEB=4V, IC=0 0.3 V IC=1A, IB=0.1A 0.6 V IC=3A, IB=0.3A 1.25 V IC=1A, IB=0.1A 1.0 V IC=1A, VCE=2V VCE=2V, IC=50mA 300 VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=2A MHz VCE=5V, IC=100mA, f=100MHz n s VCC=10V, IC=500mA, IB1=IB2=50mA 30 pF VCB=10V, f=1MHz 2.

Part

GL156

Description

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL156 D escription Features ISSUED DATE :2004/ 12/29 REVISED DATE :2005/08/02B NPN SI LICON PLANAR HIGH PERFORMANCE TRANSISTO R The GL156 is designed for general pur pose switching and amplifier applicatio ns. 60 Volt VCEO 3 Amp continuous curre nt Low saturation voltage Package Dime nsions SOT-223 REF. A C D E I H Mill imeter Min. Max. 6.
Manufacture

GTM

Datasheet
Download GL156 Datasheet




 GL156
www.DataSheet4U.com
CORPORATION ISSUED DATE :2004/12/29
REVISED DATE :2005/08/02B
GL156
NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Description
The GL156 is designed for general purpose switching and amplifier applications.
Features
60 Volt VCEO
3 Amp continuous current
Low saturation voltage
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
5
V
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Power Dissipation
PD
Electrical Characteristics(Ta = 25 ,unless otherwise noted)
3
6
2
A
A
W
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
ton
toff
Cob
Min.
80
60
5
-
-
-
-
-
-
70
100
80
40
140
-
-
-
Typ.
-
-
-
-
-
0.12
0.43
0.9
0.8
200
200
170
80
175
45
800
-
Max.
-
-
-
100
100
0.3
0.6
1.25
1.0
-
300
-
-
-
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
MHz
ns
pF
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=100uA, IC=0
VCB=60V, IE=0
VEB=4V, IC=0
IC=1A, IB=0.1A
IC=3A, IB=0.3A
IC=1A, IB=0.1A
IC=1A, VCE=2V
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=5V, IC=100mA, f=100MHz
VCC=10V, IC=500mA, IB1=IB2=50mA
VCB=10V, f=1MHz
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%
Spice parameter data is available upon request for this device.
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 GL156
Characteristics Curve
CORPORATION ISSUED DATE :2004/12/29
REVISED DATE :2005/08/02B
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Emitter Voltage (V)
Collector Current (A)
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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