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PERFORMANCE TRANSISTOR. GL158 Datasheet

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PERFORMANCE TRANSISTOR. GL158 Datasheet






GL158 TRANSISTOR. Datasheet pdf. Equivalent




GL158 TRANSISTOR. Datasheet pdf. Equivalent





Part

GL158

Description

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL158 D escription Features ISSUED DATE :2005/ 09/28 REVISED DATE :2005/12/09B NPN SI LICON PLANAR HIGH CURRENT TRANSISTOR T he GL158 is designed for general purpos e switching and amplifier applications. 6 Amps continuous current, up to 20Amp s peak current Excellent gain character istic specified up to 10Amps Very low s aturation voltages.
Manufacture

GTM

Datasheet
Download GL158 Datasheet


GTM GL158

GL158; Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.2 5 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6 .30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Pa rameter Junction Temperature Storage Te mperature Collector to Base Voltage Col lector to Emitter .


GTM GL158

Voltage Emitter to Base Voltage Collecto r Current (DC) Collector Current (Pulse ) Total Power Dissipation Symbol Tj Tst g VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 150 60 6 6 20 3 Unit V V V A A W *The power which can be dissipated assuming the device is mounted in a ty pical manner on a P.C.B. with copper eq ual to 4 square inch minimum. Electric al Characteristics.


GTM GL158

(Ta = 25 Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sa t)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Min. 150 60 6 100 100 75 25 Typ. 200 130 ,unless otherw ise stated) Max. Unit Test Conditions V IC=100uA , IE=0 V IC=10mA, IB=0 V IE=1 00uA ,IC=0 50 nA VCB=120V, IE=0 50 nA V CES=60V 10 nA VEB=6V, IC=0 50 mV IC=100 mA, IB=5mA 100 mV .

Part

GL158

Description

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL158 D escription Features ISSUED DATE :2005/ 09/28 REVISED DATE :2005/12/09B NPN SI LICON PLANAR HIGH CURRENT TRANSISTOR T he GL158 is designed for general purpos e switching and amplifier applications. 6 Amps continuous current, up to 20Amp s peak current Excellent gain character istic specified up to 10Amps Very low s aturation voltages.
Manufacture

GTM

Datasheet
Download GL158 Datasheet




 GL158
www.DataSheet4U.com
CORPORATION ISSUED DATE :2005/09/28
REVISED DATE :2005/12/09B
GL158
NPN SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL158 is designed for general purpose switching and amplifier applications.
Features
6 Amps continuous current, up to 20Amps peak current
Excellent gain characteristic specified up to 10Amps
Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
IC
6
A
Collector Current (Pulse)
IC
20
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25 ,unless otherwise stated)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Min.
150
60
6
-
-
-
-
-
-
-
-
-
100
100
75
25
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
200
-
-
130
Max.
-
-
-
50
50
10
50
100
170
375
1.2
1.15
300
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
Test Conditions
IC=100uA , IE=0
IC=10mA, IB=0
IE=100uA ,IC=0
VCB=120V, IE=0
VCES=60V
VEB=6V, IC=0
IC=100mA, IB=5mA
IC=1A, IB=50mA
IC=2A, IB=50mA
IC=6A, IB=300mA
IC=6A, IB=300mA
VCE=1V, IC=6A
VCE=1V, IC=10mA
VCE=1V, IC=2A
VCE=1V, IC=5A
VCE=1V, IC=10A
VCE=10V, IC=100mA, f=50MHz
GL158
Page: 1/2




 GL158
CORPORATION ISSUED DATE :2005/09/28
REVISED DATE :2005/12/09B
Cob - 45 - pF
ton
toff
- 45 -
- 1100 -
ns
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%
Spice parameter data is available upon request for this device.
Characteristics Curve
VCB=10V, IE=0, f=1MHz
VCC=10V, IC=1A, IB1=IB2=100mA
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GL158
Page: 2/2










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