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PLANAR TRANSISTOR. GL772 Datasheet

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PLANAR TRANSISTOR. GL772 Datasheet






GL772 TRANSISTOR. Datasheet pdf. Equivalent




GL772 TRANSISTOR. Datasheet pdf. Equivalent





Part

GL772

Description

PNP EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL772 D escription PNP EPITAXIAL PLANAR T RANSI STOR ISSUED DATE :2004/12/17 REVISED D ATE : The GL772 is designed for using in output stage of 2W amplifier, voltag e regulator, DC-DC converter and driver . Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.3 0 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0. 25 0.35 REF. B J .
Manufacture

GTM

Datasheet
Download GL772 Datasheet


GTM GL772

GL772; 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction T emperature Storage Temperature Collecto r to Base Voltage at Ta=25 Collector to Emitter Voltage at Ta=25 Emitter to Ba se Voltage at Ta=25 Collector Current a t Ta=25 Total Power Dissipation at Ta=2 5 Symbol Tj Tstg V.


GTM GL772

CBO VCEO VEBO IC PD Ratings +150 -55 ~ + 150 -40 -30 -5.0 -3.0 1.5 V V V A W Uni t Characteristics Symbol BVCBO BVCEO B VEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE2 fT Cob at Ta = 25 Min. -40 -30 -5 30 100 Typ. -0.3 -1 160 80 55 Max. -1 -1 -0.5 -2 500 MHz pF Unit V V V A A V V IC=-100uA IC=-10mA IE=-10uA VCB=-3 0V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB= -0.2A VCE=-2V, IC=.


GTM GL772

-20mA VCE=-2V, IC=-1A VCE=-20V, IC=-20mA , f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE2 Ran k Range Q 100-200 P 160-320 E 250-500 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/12/17 REVISED DATE : Important Notice: All rights are rese rved. Reproduction in whole or in part is prohibited with.

Part

GL772

Description

PNP EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL772 D escription PNP EPITAXIAL PLANAR T RANSI STOR ISSUED DATE :2004/12/17 REVISED D ATE : The GL772 is designed for using in output stage of 2W amplifier, voltag e regulator, DC-DC converter and driver . Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.3 0 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0. 25 0.35 REF. B J .
Manufacture

GTM

Datasheet
Download GL772 Datasheet




 GL772
www.DataSheet4U.com
CORPORATION ISSUED DATE :2004/12/17
REVISED DATE :
GL772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GL772 is designed for using in output stage of 2W amplifier, voltage regulator, DC-DC converter and driver.
Package Dimensions
SOT-223
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25
Collector to Emitter Voltage at Ta=25
Emitter to Base Voltage at Ta=25
Collector Current at Ta=25
Total Power Dissipation at Ta=25
Characteristics at Ta = 25
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
160
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
+150
-55 ~ +150
-40
-30
-5.0
-3.0
1.5
Unit
V
V
V
A
W
Unit
V
V
V
A
A
V
V
MHz
pF
Test Conditions
IC=-100uA
IC=-10mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-20V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
E
250-500
1/2




 GL772
Characteristics Curve
CORPORATION ISSUED DATE :2004/12/17
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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