GL772

www.DataSheet4U.com CORPORATION GL772 Description PNP EPITAXIAL PLANAR T RANSISTOR ISSUED DATE :2004/12/17 REVISED DATE : The GL772 is designed for using in output stage of 2W amplifier, voltage regulator, DC-DC converter and driver. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 Collector to Emitter Voltage at Ta=25 Emitter to Base Voltage at Ta=25 Collector Current at Ta=25 Total Power Dissipation at Ta=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -40 -30 -5.0 -3.0 1.5 V V V A W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob at Ta = 25 Min. -40 -30 -5 30 100 Typ. -0.3 -1 160 80 55 Max. -1 -1 -0.5 -2 500 MHz pF Unit V V V A A V V IC=-100uA IC=-10mA IE=-10uA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-20V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE2 Rank Range Q 100-200 P 160-320 E 250-500 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/12/17 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior writte...