GL965

www.DataSheet4U.com ISSUED DATE :2004/04/25 REVISED DATE :2004/12/08B GL965 Description NP N E PITAX I AL PLANAR T RANSI STOR The GL965 is designed for use as AF output amplifier and flash unit. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Symbol Tj Tstg Ratings +150 -55 ~ +150 Unit Absolute Maximum Ratings at Ta = 25 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS) Total Power Dissipation at Ta = 25 BVCBO BVCEO BVEBO IC IC PD 40 20 7.0 5 8 2 V V V A A W Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob at Ta = 25 Min. 40 20 7 230 150 Typ. 0.35 150 Max. 0.1 0.1 1 800 50 MHz pF Unit V V V uA uA V IC=100uA IC=1mA IE=10uA VCB=60V VEB=7V IC=3A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range Q 230-380 R 340-600 S 560-800 GL965 Page: 1/2 ISSUED DATE :2004/04/25 REVISED DATE :2004/12/08B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make c...