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CURRENT TRANSISTOR. GL965 Datasheet

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CURRENT TRANSISTOR. GL965 Datasheet






GL965 TRANSISTOR. Datasheet pdf. Equivalent




GL965 TRANSISTOR. Datasheet pdf. Equivalent





Part

GL965

Description

NPN SILICON PLANAR HIGH CURRENT TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2004/04 /25 REVISED DATE :2004/12/08B GL965 De scription NP N E PITAX I AL PLANAR T R ANSI STOR The GL965 is designed for us e as AF output amplifier and flash unit . Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.3 0 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0. 25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP..
Manufacture

GTM

Datasheet
Download GL965 Datasheet


GTM GL965

GL965; 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Symbol Tj Tstg Rati ngs +150 -55 ~ +150 Unit Absolute Maxi mum Ratings at Ta = 25 Collector to Bas e Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curre nt (Continuous) Collector Current (Peak PT=10mS) Total Po.


GTM GL965

wer Dissipation at Ta = 25 BVCBO BVCEO B VEBO IC IC PD 40 20 7.0 5 8 2 V V V A A W Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 f T Cob at Ta = 25 Min. 40 20 7 230 150 Typ. 0.35 150 Max. 0.1 0.1 1 800 50 MHz pF Unit V V V uA uA V IC=100uA IC=1mA IE=10uA VCB=60V VEB=7V IC=3A, IB=0.1A V CE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE =50mA VCB=20V, f=1.


GTM GL965

MHz * Pulse Test: Pulse Width 380us, Dut y Cycle 2% Test Conditions Classificat ion Of hFE1 Rank Range Q 230-380 R 340- 600 S 560-800 GL965 Page: 1/2 ISSUED DATE :2004/04/25 REVISED DATE :2004/12 /08B Characteristics Curve Important Notice: All rights are reserved. Reprod uction in whole or in part is prohibite d without the prior written approval of GTM. GTM reserves.

Part

GL965

Description

NPN SILICON PLANAR HIGH CURRENT TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2004/04 /25 REVISED DATE :2004/12/08B GL965 De scription NP N E PITAX I AL PLANAR T R ANSI STOR The GL965 is designed for us e as AF output amplifier and flash unit . Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.3 0 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0. 25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP..
Manufacture

GTM

Datasheet
Download GL965 Datasheet




 GL965
www.DataSheet4U.com
GL965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GL965 is designed for use as AF output amplifier and flash unit.
Package Dimensions
SOT-223
ISSUED DATE :2004/04/25
REVISED DATE :2004/12/08B
Absolute Maximum Ratings
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (Continuous)
Collector Current (Peak PT=10mS)
Total Power Dissipation at Ta = 25
Characteristics at Ta = 25
BVCBO
BVCEO
BVEBO
IC
IC
PD
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
Classification Of hFE1
Rank
Range
Q
230-380
R
340-600
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
+150
-55 ~ +150
40
20
7.0
5
8
2
Unit
V
V
V
A
A
W
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
S
560-800
GL965
Page: 1/2




 GL965
Characteristics Curve
ISSUED DATE :2004/04/25
REVISED DATE :2004/12/08B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165
GL965
Page: 2/2










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