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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP160N04TDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTIO...
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP160N04TDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP160N04TDG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP160N04TDG-E1-AY NP160N04TDG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 p/reel
PACKAGE TO-263-7pin (MP-25ZT) typ. 1.5 g
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A) High Current Rating ID(DC) = ±160 A Logic level drive type (TO-263-7pin)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
40 ±20 ±160 ±640 220 1.8 175 −55 to +175 372 61 372
V V A A W W °C °C mJ A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy
Note2 Note3 Note3
EAS IAR EAR
Repetitive Avalanche Current Repetitive Avalanche Energy
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. RG = 25 Ω, Tch(peak) ≤ 150°C
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0....