TIM1011-4L

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-4L TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ΔG ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN. 35.5 6.5 ⎯ ⎯ ⎯ -42 ⎯ ⎯ TYP. MAX. 36.5 ⎯ 7.5 1.7 ⎯ 24 -45 1.7 ⎯ ⎯ 2.2 ±0.8 ⎯ ⎯ 2.2 70 CONDITIONS VDS= 9V f= 10.7 to 11.7GHz ηadd IM3 IDS2 ΔTch Two-Tone Test Po=25.0 dBm (Single Carrier Level) (VDS x IDS + Pin – P1dB) x Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25°C ) UNIT mS V A V °C/W MIN. ⎯ -2.0 ⎯ -5 ⎯ TYP. 1200 -3.5 4.0 ⎯ 2.9 MAX. ⎯ -5.0 ⎯ ⎯ 3.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 2.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -60μA Channel to Case ‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, ...