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GaAs FET. TIM1011-4L Datasheet

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GaAs FET. TIM1011-4L Datasheet






TIM1011-4L FET. Datasheet pdf. Equivalent




TIM1011-4L FET. Datasheet pdf. Equivalent





Part

TIM1011-4L

Description

MICROWAVE POWER GaAs FET

Manufacture

Toshiba Semiconductor

Datasheet
Download TIM1011-4L Datasheet


Toshiba Semiconductor TIM1011-4L

TIM1011-4L; www.DataSheet4U.com MICROWAVE POWER GaA s FET MICROWAVE SEMICONDUCTOR TIM1011- 4L TECHNICAL DATA FEATURES „ HIGH POW ER P1dB=36.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11 .7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERIST ICS Output Power at 1dB Gain Compressio n Point Power Gain at .


Toshiba Semiconductor TIM1011-4L

1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3 rd Order Intermodulation Distortion Dra in Current Channel Temperature Rise SYM BOL P1dB G1dB IDS1 ΔG ( Ta= 25°C ) U NIT dBm dB A dB % dBc A °C MIN. 35.5 6 .5 ⎯ ⎯ ⎯ -42 ⎯ ⎯ TYP. MAX. 36 .5 ⎯ 7.5 1.7 ⎯ 24 -45 1.7 ⎯ ⎯ 2 .2 ±0.8 ⎯ ⎯ 2.2 70 CONDITIONS VD S= 9V f= 10.7 to 11.7GHz ηadd IM3 IDS2 ΔTch.


Toshiba Semiconductor TIM1011-4L

Two-Tone Test Po=25.0 dBm (Single Carri er Level) (VDS x IDS + Pin – P1dB) x Rth(c-c) Recommended gate resistance(R g) : Rg= 150 Ω(MAX.) ELECTRICAL CH ARACTERISTICS CHARACTERISTICS Transcond uctance Pinch-off Voltage Saturated Dra in Current Gate-Source Breakdown Voltag e Thermal Resistance SYMBOL ( Ta= 25° C ) UNIT mS V A V °C/W MIN. ⎯ -2.0 -5 ⎯ TYP. 1200 -3.5 4.0 ⎯ .



Part

TIM1011-4L

Description

MICROWAVE POWER GaAs FET

Manufacture

Toshiba Semiconductor

Datasheet
Download TIM1011-4L Datasheet




 TIM1011-4L
www.DataSheet4U.com
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1011-4L
FEATURES
„ HIGH POWER
„ BROAD BAND INTERNALLY MATCHED FET
P1dB=36.5dBm at 10.7GHz to 11.7GHz
„ HIGH GAIN
„ HERMETICALLY SEALED PACKAGE
G1dB=7.5dB at 10.7GHz to 11.7GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT MIN. TYP. MAX.
Output Power at 1dB Gain P1dB
dBm 35.5 36.5
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
G1dB
VDS= 9V
dB 6.5 7.5
f= 10.7 to 11.7GHz
IDS1
A 1.7 2.2
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
ΔG
ηadd
IM3
IDS2
dB ⎯ ⎯ ±0.8
% 24
Two-Tone Test
dBc -42 -45
Po=25.0 dBm
(Single Carrier Level)
A
1.7 2.2
Channel Temperature Rise ΔTch (VDS x IDS + Pin – P1dB) °C ⎯ ⎯ 70
x Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Transconductance
gm VDS= 3V
mS 1200
IDS= 2.0A
Pinch-off Voltage
VGSoff VDS= 3V
V -2.0 -3.5 -5.0
IDS= 60mA
Saturated Drain Current
IDSS VDS= 3V
A 4.0
VGS= 0V
Gate-Source Breakdown
VGSO IGS= -60μA
V -5 ⎯ ⎯
Voltage
Thermal Resistance
Rth(c-c) Channel to Case
°C/W 2.9 3.5
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Sep. 2006





 TIM1011-4L
TIM1011-4L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-9D1B)
RATING
15
-5
5.2
42.8
175
-65 to +175
Unit: mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2





 TIM1011-4L
TIM1011-4L
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=9V
IDS1.7A
Pin=29.0dBm
37
36
35
34
33
10.7
11.2
11.7
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=11.7GHz
38 VDS=9V
IDS1.7A
37
36
35
34
33
32
31
30
22
24
Pout
ηadd
26 28
Pin(dBm)
30
3
70
60
50
40
30
20
10
0
32



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