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GaAs FET. TIM1011-8L Datasheet

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GaAs FET. TIM1011-8L Datasheet






TIM1011-8L FET. Datasheet pdf. Equivalent




TIM1011-8L FET. Datasheet pdf. Equivalent





Part

TIM1011-8L

Description

MICROWAVE POWER GaAs FET

Manufacture

Toshiba Semiconductor

Datasheet
Download TIM1011-8L Datasheet


Toshiba Semiconductor TIM1011-8L

TIM1011-8L; www.DataSheet4U.com MICROWAVE POWER GaA s FET MICROWAVE SEMICONDUCTOR TIM1011- 8L TECHNICAL DATA FEATURES „ LOW INTE RMODULATION DISTORTION IM3=-45 dBc at P out= 28.0dBm Single Carrier Level „ HI GH POWER P1dB=39.5 dBm at 10.7 GHz to 1 1.7 GHz „ HIGH GAIN G1dB=6.0 dB at 10. 7 GHz to 11.7 GHz „ BROAD BAND INTERNA LLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE.


Toshiba Semiconductor TIM1011-8L

SPECIFICATIONS CHARACTERISTICS Output P ower at 1dB Gain Compression Point Powe r Gain at 1dB Gain Compression Point Dr ain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ( Ta= 25°C ) UNIT dBm dB A % dBc A °C MIN. 38.5 5.0 ⎯ ⎯ -42 ⎯ ⎯ TYP. MAX. 39.5 ⎯ 6.0 3.4 22 -45 3.4 ⎯ ⎯ 4.4 ⎯ ⎯ 4.4 80.


Toshiba Semiconductor TIM1011-8L

CONDITIONS VDS= 9V f= 10.7 to 11.7GHz ηadd IM3 IDS2 ΔTch Two-Tone Test Po =28. 0dBm (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) Recomm ended gate resistance(Rg) : Rg= 150 Ω (MAX.) ELECTRICAL CHARACTERISTICS ( T a= 25°C ) CHARACTERISTICS Transconduc tance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL.



Part

TIM1011-8L

Description

MICROWAVE POWER GaAs FET

Manufacture

Toshiba Semiconductor

Datasheet
Download TIM1011-8L Datasheet




 TIM1011-8L
www.DataSheet4U.com
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1011-8L
FEATURES
„ LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 28.0dBm
Single Carrier Level
„ HIGH POWER
P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
„ HIGH GAIN
G1dB=6.0 dB at 10.7 GHz to 11.7 GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS
Output Power at 1dB Gain P1dB
Compression Point
Power Gain at 1dB Gain
G1dB
VDS= 9V
Compression Point
f= 10.7 to 11.7GHz
Drain Current
IDS1
Power Added Efficiency
ηadd
3rd Order Intermodulation
IM3
Two-Tone Test
Distortion
Po=28. 0dBm
Drain Current
IDS2
(Single Carrier Level)
Channel Temperature Rise
ΔTch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
UNIT
dBm
dB
A
%
dBc
A
°C
MIN.
38.5
5.0
-42
TYP. MAX.
39.5
6.0
3.4 4.4
22
-45
3.4 4.4
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
Transconductance
gm VDS= 3V
IDS= 4.0 A
Pinch-off Voltage
VGSoff VDS= 3V
IDS= 120mA
Saturated Drain Current
IDSS VDS= 3V
VGS= 0V
Gate-Source Breakdown
VGSO IGS= -120μA
Voltage
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS 2400
V -2.0 -3.5 -5.0
A 8.0
V -5 ⎯ ⎯
°C/W 1.6 2.5
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. May 2007





 TIM1011-8L
TIM1011-8L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-11C1B)
RATING
15
-5
10.4
60
175
-65 to +175
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2





 TIM1011-8L
RF PERFORMANCE
TIM1011-8L
Output Power (Pout) vs. Frequency
VDS=9V
41 IDS3.4A
Pin=33.5 dBm
40
39
38
37
10.7
11.2
11.7
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
42
freq.=11.7GHz
41 VDS=9V
IDS3.4A
40
39 Pout
38
37
36
35 ηadd
34
33
27 29 31 33 35
Pin(dBm)
3
40
30
20
10
0
37



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