UPA2450C

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2450C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) 1 0.5±0.1 0.5±0.1 DESCRIPTION The μ PA2450C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2450C features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 6 1.85±0.1 0.145±0.05 2 3 5 4 FEATURES 2.5 V drive available Low on-state resistance RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A) Built-in G-S protection diode against ESD 0.25 +0.1 -0.05 4.4±0.1 5.0±0.1 0.8 MAX. 7 0.05 +0 -0.05 (0.15) (0.9) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Note2 Note1 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 2 20.0 ±12.0 ±8.6 ±70.0 2.5 0.7 150 −55 to +150 V V A A W W °C °C (0.5) (2.2) Each lead has same dimensions. 5,6: Source 2 1,2: Source 1 4: Gate 2 3: Gate 1 7: Drain Drain Current (pulse) Total Power Dissipation (2 units) Total Power Dissipation (2 units) Channel Temperature Storage Temperature EQUIVALENT CIRCUIT Drain1 Drain2 Notes 1. Mounted on ceramic board of 50 cm x 1.1 mmt 2. PW ≤ 10 μs, Duty Cycle ≤ 1% 2 3. Mounted on FR-4 b...