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EFFECT TRANSISTOR. UPA2451C Datasheet

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EFFECT TRANSISTOR. UPA2451C Datasheet






UPA2451C TRANSISTOR. Datasheet pdf. Equivalent




UPA2451C TRANSISTOR. Datasheet pdf. Equivalent





Part

UPA2451C

Description

MOS FIELD EFFECT TRANSISTOR



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR μ PA2451C N-CHA NNEL MOS FIELD EFFECT TRANSISTOR FOR SW ITCHING PACKAGE DRAWING (Unit: mm) 1 0. 5±0.1 0.5±0.1 DESCRIPTION The μ PA 2451C is a switching device, which can be driven directly by a 2.5 V power sou rce. The μ PA2451C features a low on-s tate resistance and excellent switching characteristics, and i.
Manufacture

NEC

Datasheet
Download UPA2451C Datasheet


NEC UPA2451C

UPA2451C; s suitable for applications such as powe r switch of portable machine and so on. 6 1.85±0.1 0.145±0.05 2 3 5 4 FE ATURES • 2.5 V drive available • Lo w on-state resistance RDS(on)1 = 20.0 m Ω MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(o n)2 = 21.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 25.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 32.0 mΩ MAX. (VGS = 2.5 V, ID = 4.0 .


NEC UPA2451C

A) • Built-in G-S protection diode aga inst ESD 0.25 +0.1 -0.05 4.4±0.1 5.0 ±0.1 0.8 MAX. 7 0.05 +0 -0.05 (0.15) (0.9) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Note2 Note1 N ote3 VDSS VGSS ID(DC) ID(pulse) PT1 PT 2 Tch Tstg 2 30.0 ±12.0 ±8.2 ±60.0 2.5 0.7 150 −55 to +150 V.


NEC UPA2451C

V A A W W °C °C Drain1 Drain2 (0.5) ( 2.2) Each lead has same dimensions. 5,6 : Source 2 1,2: Source 1 4: Gate 2 3: G ate 1 7: Drain Drain Current (pulse) Total Power Dissipation (2 units) Total Power Dissipation (2 units) Channel Te mperature Storage Temperature EQUIVALE NT CIRCUIT Notes 1. Mounted on ceramic board of 50 cm x 1.1 mmt 2. PW ≤ 10 μs, Duty Cycle ≤ 1% 2 .

Part

UPA2451C

Description

MOS FIELD EFFECT TRANSISTOR



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR μ PA2451C N-CHA NNEL MOS FIELD EFFECT TRANSISTOR FOR SW ITCHING PACKAGE DRAWING (Unit: mm) 1 0. 5±0.1 0.5±0.1 DESCRIPTION The μ PA 2451C is a switching device, which can be driven directly by a 2.5 V power sou rce. The μ PA2451C features a low on-s tate resistance and excellent switching characteristics, and i.
Manufacture

NEC

Datasheet
Download UPA2451C Datasheet




 UPA2451C
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2451C
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The μ PA2451C is a switching device, which can be driven directly
by a 2.5 V power source.
The μ PA2451C features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
16
25
34
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 20.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 25.0 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 32.0 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
Built-in G-S protection diode against ESD
4.4±0.1
5.0±0.1
7
(0.15)
(0.9)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30.0
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (2 units) Note1
Total Power Dissipation (2 units) Note3
VGSS
ID(DC)
ID(pulse)
PT1
PT2
±12.0
±8.2
±60.0
2.5
0.7
Channel Temperature
Tch 150
Storage Temperature
Tstg 55 to +150
V
V
A (0.5)
A
W
W
°C
°C
(2.2)
Each lead has same dimensions.
1,2: Source 1
5,6: Source 2
3: Gate 1
4: Gate 2
7: Drain
EQUIVALENT CIRCUIT
Notes 1. Mounted on ceramic board of 50 cm2 x 1.1 mmt
2. PW 10 μs, Duty Cycle 1%
3. Mounted on FR-4 board of 50 cm2 x 1.1 mmt
Gate1
Drain1
Body
Diode Gate2
Drain2
Body
Diode
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
μ PA2451CTL-E1-A Note
μ PA2451CTL-E2-A Note
Sn-Bi
Reel
3000 p/reel
6PIN HWSON (4521)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18793EJ1V0DS00 (1st edition)
Date Published July 2007 NS
Printed in Japan
2007




 UPA2451C
μ PA2451C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 30.0 V, VGS = 0 V
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = ±12.0 V, VDS = 0 V
VDS = 10.0 V, ID = 1.0 mA
VDS = 10.0 V, ID = 4.0 A
VGS = 4.5 V, ID = 4.0 A
RDS(on)2
RDS(on)3
VGS = 4.0 V, ID = 4.0 A
VGS = 3.1 V, ID = 4.0 A
RDS(on)4
VGS = 2.5 V, ID = 4.0 A
Input Capacitance
Ciss VDS = 10.0 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 15.0 V,
Rise Time
tr ID = 4.0 A,
Turn-off Delay Time
Fall Time
td(off)
tf
VGS = 4.0 V,
RG = 6 Ω
Total Gate Charge
QG VDD = 24.0 V,
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
QGS
QGD
VF(S-D)
VGS = 4.0 V,
ID = 8.2 A
IF = 8.2 A, VGS = 0 V
Note Pulsed: PW 350 μs, Duty Cycle 2%
MIN.
0.50
6.0
12.0
12.5
14.0
15.5
TYP.
17.5
18.0
21.0
25.5
605
87
40
40
75
140
85
6.3
1.5
2.3
0.86
MAX.
1.0
±10.0
1.50
20.0
21.0
25.0
32.0
UNIT
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet G18793EJ1V0DS




 UPA2451C
μ PA2451C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3
Mounted on ceramic board of
2.5 50 cm2 x 1.1 mmt, 2 units
Mounted on FR-4 board of
2 50 cm2 x 1.1 mmt, 2 units
1.5
1
0.5
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
1
0.1
0.01
RDS(on)
(V GS
Limit
= 4.5
ed
V)
ID(DC)
ID(pulse)
1i
1i 00
m
i
s
m
i
s
1i 0
m
i
s
DC (2 units)
Single Pulse
Mounted on ceramic board of
50 cm2 x 1.1 mmt
PD (FET1):PD (FET2) = 1:1
PW = 1i 0 μs
0.1 1
10
100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Mounted on FR-4 board of
50 cm2 x 1.1 mmt
Mounted on ceramic board of
10 50 cm2 x 1.1 mmt
1
Single Pulse
PD (FET1):PD (FET2) = 1:1
0.1
1m
10 m
100 m
1
10
PW - Pulse Width - s
100 1000
Data Sheet G18793EJ1V0DS
3






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