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UPA2680T1E Dataheets PDF



Part Number UPA2680T1E
Manufacturers NEC
Logo NEC
Description MOSFET
Datasheet UPA2680T1E DatasheetUPA2680T1E Datasheet (PDF)

www.DataSheet4U.com DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE μ PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. The μ PA2680T1E incorporates a MOSFET which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for applications such as DC/DC converter of portable machine and so o.

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www.DataSheet4U.com DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE μ PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. The μ PA2680T1E incorporates a MOSFET which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNECTION (Top View) 6 5 4 FEATURES • 4.5 V drive available MOSFET • Low on-state resistance MOSFET RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) • Low forward voltage Schottky Barrier Diode VF = 0.36 V TYP. (IF = 1.0 A) 1 2 3 1: Anode 2: Source/Cathode (Heat sink 2) 3: Gate 4: Drain (Heat sink 1) 5: Source/Cathode (Heat sink 2) 6: Anode ORDERING INFORMATION PART NUMBER PACKAGE 6LD3x3MLP μ PA2680T1E Marking: A2680 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±150 V TYP. (C = 200 pF, R = 0 Ω, Single Pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G17661EJ2V0DS00 (2nd edition) Date Published May 2007 NS CP(K) Printed in Japan 2006 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. μ PA2680T1E ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) MOSFET Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Note1 Drain Current (DC) Note2 Drain Current (pulse) Note1 Total Power Dissipation Channel Temperature Storage Temperature 2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 ±12 ±3.0 ±12.0 1.3 150 −55 to +150 V V A A W °C °C Notes 1. Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board 2 2 (Cu pad: 322 mm x 70 μm, FR-4: 1452 mm x 1.6 mmt) 2. PW ≤ 10 μs, Duty Cycle ≤ 1% Schottky Barrier Diode Repetitive Peak Reverse Voltage Note Average Forward Current Note Total Power Dissipation Junction Temperature Storage Temperature VRRM IF PT TJ Tstg 20 1.8 1.2 125 −55 to +150 V A W °C °C Note Square wave, Duty Cycle = 50% 2 Mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board 2 2 (Cu pad: 322 mm x 70 μm, FR-4: 1452 mm x 1.6 mmt) SBD side: 85°C/W when mounted on a 1 in pad of 2 oz copper 2 FET side: 97°C/W when mounted on a 1 in pad of 2 oz copper 2 2 Data Sheet G17661EJ2V0DS μ PA2680T1E ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) MOSFET CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = VGS, ID = 0.25 mA VDS = 10 V, ID = 1.5 A VGS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz VDD = 10 V, ID = 1.5 A, VGS = 4.5 V, RG = 10 Ω MIN. TYP. MAX. 1 UNIT μA μA V S ±10 0.6 1.0 3.6 38 44 190 90 33 9.0 7.0 16 4.0 50 60 2.0 Drain to Source On-state Resistance mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 16 V, VGS = 4.5 V, ID = 2.0 A IF = 3.0 A, VGS = 0 V 3.1 0.6 1.1 0.85 Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL PG. RG VDD ID VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% ID Wave Form VGS VGS Wave Form 0 10% 90% VGS 90% D.U.T. IG = 2 mA 50 Ω RL VDD 90% PG. ID 0 10% 10% td(on) ton tr td(off) toff tf Schottky Barrier Diode CHARACTERISTICS Forward Voltage Reverse Current Terminal Capacitance SYMBOL VF IR CT TEST CONDITIONS IF = 1.0 A VR = 5 V, TA = 100°C f = 1.0 MHz, VR = 10 V 36 MIN. TYP. 0.36 MAX. 0.39 15 UNIT V mA pF Data Sheet G17661EJ2V0DS 3 μ PA2680T1E MOSFET TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.5 Mounted on FR-4 board of 1452 mm2 x 1.6 mmt 120 dT - Percentage of Rated Power - % 100 80 60 40 20 0 0.


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