UPA2727UT1A

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2727UT1A SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications. PACKAGE DRAWING (Unit: mm) 1.27 Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) 0.42 −0.05 3 4 +0.1 6 5 6 ±0.2 5.4 ±0.2 RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) Low QGD QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) Thin type surface mount package with heat spreader (8-pin HVSON) RoHS Compliant 5 ±0.2 0.27 ±0.05 1.0 MAX. 2 7 5.15 ±0.2 FEATURES 1 8 0.10 S 0.10 M 0 +0.05 −0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 1 0.2 4.1 ±0.2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 ±20 ±16 ±96 1.5 4.6 150 −55 to +150 16 26 V V A A W W °C °C A mJ 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain Total Power Dissipation Channel Temperature Storage Temperature 3.65 ±0.2 0.6 ±0.15 0.7 ±0.15 Total Power Dissipation (PW = 10 sec) EQUIVALENT CIRCUIT Drain Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS THERMAL RESISTANCE Channel to Ambient Thermal Resistance Note2 Rth(ch-A) Rth(ch-C) 83.3 2.0 °C/W °C/W Gate Body Diode Channel to Case (Drain) Thermal Resistance Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% Source 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0....