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DDR2 SDRAM. MT47H256M4 Datasheet

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DDR2 SDRAM. MT47H256M4 Datasheet






MT47H256M4 SDRAM. Datasheet pdf. Equivalent




MT47H256M4 SDRAM. Datasheet pdf. Equivalent





Part

MT47H256M4

Description

DDR2 SDRAM



Feature


DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 ba nks MT47H64M16 – 8 Meg x 16 x 8 banks 1Gb: x4, x8, x16 DDR2 SDRAM Features Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/ O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n- bit prefetch architecture • Duplicate output strobe (RDQS) option for x8 .
Manufacture

Micron Technology

Datasheet
Download MT47H256M4 Datasheet


Micron Technology MT47H256M4

MT47H256M4; • DLL to align DQ and DQS transitions with CK • 8 internal banks for concur rent operation • Programmable CAS lat ency (CL) • Posted CAS additive laten cy (AL) • WRITE latency = READ latenc y - 1 tCK • Selectable burst lengths (BL): 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle re fresh • On-die termination (ODT) • Industrial temperature (IT) option • A.


Micron Technology MT47H256M4

utomotive temperature (AT) option • Ro HS-compliant • Supports JEDEC clock j itter specification Options1 • Confi guration – 256 Meg x 4 (32 Meg x 4 x 8 banks) – 128 Meg x 8 (16 Meg x 8 x 8 banks) – 64 Meg x 16 .


Micron Technology MT47H256M4

.

Part

MT47H256M4

Description

DDR2 SDRAM



Feature


DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 ba nks MT47H64M16 – 8 Meg x 16 x 8 banks 1Gb: x4, x8, x16 DDR2 SDRAM Features Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/ O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n- bit prefetch architecture • Duplicate output strobe (RDQS) option for x8 .
Manufacture

Micron Technology

Datasheet
Download MT47H256M4 Datasheet




 MT47H256M4
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
1Gb: x4, x8, x16 DDR2 SDRAM
Features
Features
• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
Options1
• Configuration
– 256 Meg x 4 (32 Meg x 4 x 8 banks)
– 128 Meg x 8 (16 Meg x 8 x 8 banks)
– 64 Meg x 16 (8 Meg x 16 x 8 banks)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :H
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :M
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (8mm x 10mm) Die
Rev :H
– 60-ball FBGA (8mm x 10mm) Die
Rev :M
• FBGA package (lead solder) – x16
– 84-ball FBGA (8mm x 12.5mm) Die
Rev :H
• FBGA package (lead solder) – x4, x8
– 60-ball FBGA (8mm x 10mm) Die
Rev :H
• Timing – cycle time
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Self refresh
– Standard
– Low-power
• Operating temperature
– Commercial (0°C TC +85°C)2
– Industrial (–40°C TC +95°C;
–40°C TA +85°C)
• Revision
Marking
256M4
128M8
64M16
HR
NF
CF
SH
HW
JN
-187E
-25E
-3
None
L
None
IT
:H / :M
Notes:
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
2. For extended CT operating temperature see
IDD Table 11 (page 30) Note 7.
PDF: 09005aef8565148a
1GbDDR2.pdf – Rev. AA 07/14 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




 MT47H256M4
1Gb: x4, x8, x16 DDR2 SDRAM
Features
Table 1: Key Timing Parameters
Speed Grade
-187E
-25E
-3
CL = 3
400
400
400
CL = 4
533
533
533
Data Rate (MT/s)
CL = 5
800
800
667
CL = 6
800
800
n/a
Table 2: Addressing
Parameter
Configuration
Refresh count
Row address
Bank address
Column address
256 Meg x 4
32 Meg x 4 x 8 banks
8K
A[13:0] (16K)
BA[2:0] (8)
A[11, 9:0] (2K)
128 Meg x 8
16 Meg x 8 x 8 banks
8K
A[13:0] (16K)
BA[2:0] (8)
A[9:0] (1K)
CL = 7
1066
n/a
n/a
tRC (ns)
54
55
55
64 Meg x 16
8 Meg x 16 x 8 banks
8K
A[12:0] (8K)
BA[2:0] (8)
A[9:0] (1K)
Figure 1: 1Gb DDR2 Part Numbers
MT47H
Example Part Number: MT47H128M8SH-25E:M
Configuration
-
Package
Speed
:
Revision
:H/:M Revision
Configuration
256 Meg x 4
128 Meg x 8
64 Meg x 16
256M4
128M8
64M16
Package
Pb-free
84-ball 8mm x 12.5mm FBGA
60-ball 8mm x 10.0mm FBGA
84-ball 8mm x 12.5mm FBGA
60-ball 8mm x 10.0mm FBGA
Lead solder
84-ball 8mm x 12.5mm FBGA
60-ball 8mm x 10mm FBGA
L Low power
IT Industrial temperature
Speed Grade
-187E tCK = 1.875ns, CL = 7
-25E tCK = 2.5ns, CL = 5
HR -3 tCK = 3ns, CL = 5
CF
NF
SH
HW
JN
Note: 1. Not all speeds and configurations are available in all packages.
FBGA Part Number System
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
PDF: 09005aef8565148a
1GbDDR2.pdf – Rev. AA 07/14 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.




 MT47H256M4
1Gb: x4, x8, x16 DDR2 SDRAM
Features
Contents
State Diagram .................................................................................................................................................. 8
Functional Description ..................................................................................................................................... 9
Industrial Temperature ................................................................................................................................. 9
General Notes ............................................................................................................................................ 10
Functional Block Diagrams ............................................................................................................................. 11
Ball Assignments and Descriptions ................................................................................................................. 14
Packaging ...................................................................................................................................................... 18
Package Dimensions ................................................................................................................................... 18
FBGA Package Capacitance ......................................................................................................................... 22
Electrical Specifications – Absolute Ratings ..................................................................................................... 23
Temperature and Thermal Impedance ........................................................................................................ 23
Electrical Specifications – IDD Parameters ........................................................................................................ 26
IDD Specifications and Conditions ............................................................................................................... 26
IDD7 Conditions .......................................................................................................................................... 27
AC Timing Operating Specifications ................................................................................................................ 32
AC and DC Operating Conditions .................................................................................................................... 44
ODT DC Electrical Characteristics ................................................................................................................... 44
Input Electrical Characteristics and Operating Conditions ............................................................................... 45
Output Electrical Characteristics and Operating Conditions ............................................................................. 48
Output Driver Characteristics ......................................................................................................................... 50
Power and Ground Clamp Characteristics ....................................................................................................... 54
AC Overshoot/Undershoot Specification ......................................................................................................... 55
Input Slew Rate Derating ................................................................................................................................ 57
Commands .................................................................................................................................................... 70
Truth Tables ............................................................................................................................................... 70
DESELECT ................................................................................................................................................. 74
NO OPERATION (NOP) ............................................................................................................................... 75
LOAD MODE (LM) ...................................................................................................................................... 75
ACTIVATE .................................................................................................................................................. 75
READ ......................................................................................................................................................... 75
WRITE ....................................................................................................................................................... 75
PRECHARGE .............................................................................................................................................. 76
REFRESH ................................................................................................................................................... 76
SELF REFRESH ........................................................................................................................................... 76
Mode Register (MR) ........................................................................................................................................ 76
Burst Length .............................................................................................................................................. 77
Burst Type .................................................................................................................................................. 78
Operating Mode ......................................................................................................................................... 78
DLL RESET ................................................................................................................................................. 78
Write Recovery ........................................................................................................................................... 79
Power-Down Mode ..................................................................................................................................... 79
CAS Latency (CL) ........................................................................................................................................ 80
Extended Mode Register (EMR) ....................................................................................................................... 81
DLL Enable/Disable ................................................................................................................................... 82
Output Drive Strength ................................................................................................................................ 82
DQS# Enable/Disable ................................................................................................................................. 82
RDQS Enable/Disable ................................................................................................................................. 82
Output Enable/Disable ............................................................................................................................... 82
On-Die Termination (ODT) ......................................................................................................................... 83
Off-Chip Driver (OCD) Impedance Calibration ............................................................................................ 83
PDF: 09005aef8565148a
1GbDDR2.pdf – Rev. AA 07/14 EN
3 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.






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