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Silicon Transistor. 2SJ6812 Datasheet

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Silicon Transistor. 2SJ6812 Datasheet






2SJ6812 Transistor. Datasheet pdf. Equivalent




2SJ6812 Transistor. Datasheet pdf. Equivalent





Part

2SJ6812

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


www.DataSheet4U.com FJAF6812 FJAF6812 High Voltage Color Display Horizontal D eflection Output • High Collector-Bas e Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µ s • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diff used Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherw ise noted Symbol VCBO VCEO.
Manufacture

Fairchild Semiconductor

Datasheet
Download 2SJ6812 Datasheet


Fairchild Semiconductor 2SJ6812

2SJ6812; VEBO IC ICP* PC TJ TSTG Parameter Colle ctor-Base Voltage Collector-Emitter Vol tage Emitter-Base Voltage Collector Cur rent (DC) Collector Current (Pulse) Col lector Dissipation Junction Temperature Storage Temperature Rating 1500 750 6 12 24 60 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: PW=300µs, dut y Cycle=2% Pulsed Electrical Character istics TC=25°C unless.


Fairchild Semiconductor 2SJ6812

otherwise noted Symbol ICES ICBO IEBO B VEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut- off Current Emitter-Base Breakdown Volt age DC Current Gain Collector-Emitter S aturation Voltage Base-Emitter Saturati on Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, I E=0 VEB=4V, IC=0 I.


Fairchild Semiconductor 2SJ6812

E=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC= 8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V * Pu lse Test: PW=20µs, duty Cycle=1% Pulse d Thermal Characteristics TC=25°C unl ess otherwise noted Symbol RθjC Parame ter Thermal Resistance, Junction to Cas e Typ 1.4 Max 2.08 Units °C.

Part

2SJ6812

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


www.DataSheet4U.com FJAF6812 FJAF6812 High Voltage Color Display Horizontal D eflection Output • High Collector-Bas e Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µ s • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diff used Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherw ise noted Symbol VCBO VCEO.
Manufacture

Fairchild Semiconductor

Datasheet
Download 2SJ6812 Datasheet




 2SJ6812
www.DataSheet4U.com
FJAF6812
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color Monitor
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
12
24
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=8A, IB=2A
IC=8A, IB=2A
VCC=200V, IC=7A, RL=30
IB1= 1.4A, IB2= - 2.8A
6
10
5
1 mA
10 µA
1 mA
V
40
8
3V
1.5 V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
1.4
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001




 2SJ6812
www.DataSheet4U.com
Typical Characteristics
11
10 Ib=1.8A Ib=1.6A Ib=1.4A
9 Ib=1.2A
Ib=1.0A
8 Ib=800mA
7 Ib=600mA
6 Ib=400mA
5 Ib=200mA
4
3
2
1
0
0 2 4 6 8 10 12 14
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
100
IC = 5IB
10
125oC
1
75oC
25oC
0.1
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
14
VCE = 5V
12
10
8
6 125oC
4
75oC
25oC
2
Ta = - 25oC
0
0.0 0.5 1.0 1.5
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
100
125oC 75oC
Ta= - 25oC 25oC
10
VCE = 5V
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
IC = 3IB
10
125oC
1
75oC
0.1 25oC
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage
10
tSTG
1
0.1
RESISTIVE LOAD
Vcc = 200V
IC = 7A
IB1 = 1.4A
0.01
-0.1
-1
tF
IB2 [A], REVERSE BASE CURRENT
Figure 6. Switching Time
-10
Rev. B1, May 2001




 2SJ6812
www.DataSheet4U.com
Typical Characteristics (Continued)
100
IC (Pulsed)
10 IC (DC)
10ms 1ms
1
TC = 25 oC
Single Pulse
300µs
0.1
0.01
1
10 100 1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
5000
Figure 7. Forward Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC [oC], CASE TEMPERATURE
Figure 9. Power Derating
30
10
IB1 = 1.2A, IB2 = - 4A
VBE(off) = - 3V
L = 200µH
Single Pulse
1
10 100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
5000
Figure 8. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001






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