IRHMJ3250

www.DataSheet4U.com PD-96914 RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ™ IRHMJ7250 200V, N-CHANNEL ® TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) IRHMJ4250 IRHMJ8250 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.10 Ω 0.10 Ω 0.10 Ω 0.10 Ω ID 26A 26A 26A 26A TO-254AA Tabless International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Volta...