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SURFACE MOUNT. IRHMJ57160 Datasheet

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SURFACE MOUNT. IRHMJ57160 Datasheet







IRHMJ57160 MOUNT. Datasheet pdf. Equivalent




IRHMJ57160 MOUNT. Datasheet pdf. Equivalent





Part

IRHMJ57160

Description

(IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Manufacture

International Rectifier

Datasheet
Download IRHMJ57160 Datasheet


International Rectifier IRHMJ57160

IRHMJ57160; www.DataSheet4U.com PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (T O-254AA Tabless) Product Summary Part N umber Radiation Level IRHMJ57160 100K R ads (Si) IRHMJ53160 IRHMJ54160 300K Rad s (Si) 600K Rads (Si) RDS(on) 0.018Ω 0.018Ω 0.018Ω 0.019Ω ID 35A* 35A* 35A* 35A* IRHMJ57160 100V, N-CHANNEL 5 TECHNOLOGY ™ IRHMJ58160 1000K R ads (Si) TO-254AA Tabless .


International Rectifier IRHMJ57160

International Rectifier’s R5TM techno logy provides high performance power MO SFETs for space applications. These dev ices have been characterized for Single Event Effects (SEE) with useful perfor mance up to an LET of 80 (MeV/(mg/cm2)) . The combination of low RDS(on) and lo w gate charge reduces the power losses in switching applications such as DC to DC converters and m.


International Rectifier IRHMJ57160

otor control. These devices retain all o f the well established advantages of MO SFETs such as voltage control, fast swi tching, ease of paralleling and tempera ture stability of electrical parameters . Features: n n n n n n n n n n Singl e Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditio ns Repetitive Avalanche Ratings Dynamic dv/dt Ratings Sim.



Part

IRHMJ57160

Description

(IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Manufacture

International Rectifier

Datasheet
Download IRHMJ57160 Datasheet




 IRHMJ57160
www.DataSheet4U.com
PD-96916
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (TO-254AA Tabless)
IRHMJ57160
100V, N-CHANNEL
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMJ57160 100K Rads (Si)
IRHMJ53160 300K Rads (Si)
IRHMJ54160 600K Rads (Si)
IRHMJ58160 1000K Rads (Si)
RDS(on)
0.018
0.018
0.018
0.019
ID
35A*
35A*
35A*
35A*
TO-254AA Tabless
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermatically Sealed
n Electically Isolated
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
35*
35*
140
250
2.0
±20
500
35
25
3.4
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (for 5s)
3.7 (Typical)
g
1
12/24/04





 IRHMJ57160
IRHMJ57160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
2.0
42
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
——
V
0.013 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.018
VGS = 12V, ID = 35A Ã
— 4.0
——
— 10
— 25
— 100
— -100
— 160
— 45
— 65
— 35
— 75
— 75
— 35
6.8 —
5620
1583
50
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A Ã
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 50V
VDD = 50V, ID = 35A
VGS =12V, RG = 2.35
nH Measured from Drain Lead (6mm/0.25in
from package) to Source Lead(6mm/0.25in
from package) with Source wires internally
bonded from Source Pad to Drain Pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 35*
ISM Pulse Source Current (Body Diode) À
— — 140
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 270 ns
QRR Reverse Recovery Charge
— — 1.9 µC
Tj = 25°C, IS = 35A, VGS = 0V Ã
Tj = 25°C, IF = 35A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time
* Current is limited by package
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max
— — 0.50
— 0.21 —
— — 48
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2 www.irf.com





 IRHMJ57160
PRraed-IirartaiodniaCtiohnaracteristics
IRHMJ57160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min Max Min Max
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-254)
100 —
2.0 4.0
100 —
1.5 4.0
V
— 100
— -100
— 100 nA
— -100
— 10 — 25 µA
— 0.013
— 0.014
— 0.018 — 0.019
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID =35A
VGS = 12V, ID =35A
VSD Diode Forward Voltage Ã
— 1.2 — 1.2 V
VGS = 0V, IS = 35A
1. Part numbers IRHMJ57160, IRHMJ53160 and IRHMJ54160
2. Part number IRHMJ58160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Br 36.7
I 59.8
Au 82.3
Energy
(MeV)
309
341
350
Range
(µm)
39.5
32.5
28.4
@V1G0S0=0V @VG1S0=0-5V
100 100
100 100
VDS (V)
@VG1S0=0-10V
100
80
@VG1S0=0-15V
35
25
@VG1S0=0-20V
25
120
100
80
60
40
20
0
0
-5 -10 -15 -20
VDS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3



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