IRHMJ58160

www.DataSheet4U.com PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless) Product Summary Part Number Radiation Level IRHMJ57160 100K Rads (Si) IRHMJ53160 IRHMJ54160 300K Rads (Si) 600K Rads (Si) RDS(on) 0.018Ω 0.018Ω 0.018Ω 0.019Ω ID 35A* 35A* 35A* 35A* IRHMJ57160 100V, N-CHANNEL 5 TECHNOLOGY ™ IRHMJ58160 1000K Rads (Si) TO-254AA Tabless International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Volt...