2N6989U Datasheet | Surface Mount Quad NPN Transistor





(Datasheet) 2N6989U Datasheet PDF Download

Part Number 2N6989U
Description Surface Mount Quad NPN Transistor
Manufacture OPTEK Technologies
Total Page 2 Pages
PDF Download Download 2N6989U Datasheet PDF

Features: www.DataSheet4U.com Product Bulletin JAN TX, JANTXV, 2N6989U January 1996 Surfa ce Mount Quad NPN Transistor Type JANTX , JANTXV, 2N6989U Features • Ceramic surface mount package • Hermetically sealed • Small package minimizes cir cuit board area required • Electrical performance similar to a 2N2222A • Q ualification per MIL-PRF-19500/559 Abs olute Maximum Ratings (TA = 25o C unles s otherwise noted) Collector-Base Volta ge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V Collector-Emitter V oltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Emitter-Base Voltag e . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 V Collector Current -Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA Operating Junction Tem perature(TJ) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C Storage Junction Temperature (Tst.

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www.DataSheet4U.com
Product Bulletin JANTX, JANTXV, 2N6989U
January 1996
Surface Mount Quad NPN Transistor
Type JANTX, JANTXV, 2N6989U
Features
Ceramic surface mount package
Hermetically sealed
Small package minimizes circuit board
area required
Electrical performance similar to a
2N2222A
Qualification per MIL-PRF-19500/559
Description
The JANTX2N6989U is a hermetically
sealed, ceramic surface-mount device,
consisting of four individual silicon NPN
transistors. The 20 pin ceramic package
is ideal for designs where board space
and device weight are important design
considerations.
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 V
Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
Operating Junction Temperature(TJ) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C
Storage Junction Temperature (Tstg) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C
Power Dissipation (single transistor, no heat sink) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Power Dissipation TA = 25o C (four devices driven equally) . . . . . . . . . . . . . . . 1.0 W(1)
Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 Vdc
Notes:
(1) Derate linearly 8.57 mW/oC above 25o C.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is VCB = 30 V, PD = 250
mW each transistor, TA = 25o C. Refer
to MIL-PRF-19500/559 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-20
(972)323-2200
Fax (972)323-2396

     






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