NPN Transistor. 2N6989U Datasheet

2N6989U Transistor. Datasheet pdf. Equivalent

Part 2N6989U
Description Surface Mount Quad NPN Transistor
Feature www.DataSheet4U.com Product Bulletin JANTX, JANTXV, 2N6989U January 1996 Surface Mount Quad NPN Tra.
Manufacture OPTEK Technologies
Datasheet
Download 2N6989U Datasheet

www.DataSheet4U.com Product Bulletin JANTX, JANTXV, 2N6989U 2N6989U Datasheet
TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND 2N6989U Datasheet
2N6989, 2N6989U, 2N6990 Multiple (Quad) NPN Silicon Dual In- 2N6989U Datasheet
Recommendation Recommendation Datasheet 2N6989U Datasheet





2N6989U
www.DataSheet4U.com
Product Bulletin JANTX, JANTXV, 2N6989U
January 1996
Surface Mount Quad NPN Transistor
Type JANTX, JANTXV, 2N6989U
Features
Ceramic surface mount package
Hermetically sealed
Small package minimizes circuit board
area required
Electrical performance similar to a
2N2222A
Qualification per MIL-PRF-19500/559
Description
The JANTX2N6989U is a hermetically
sealed, ceramic surface-mount device,
consisting of four individual silicon NPN
transistors. The 20 pin ceramic package
is ideal for designs where board space
and device weight are important design
considerations.
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 V
Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
Operating Junction Temperature(TJ) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C
Storage Junction Temperature (Tstg) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C
Power Dissipation (single transistor, no heat sink) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Power Dissipation TA = 25o C (four devices driven equally) . . . . . . . . . . . . . . . 1.0 W(1)
Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 Vdc
Notes:
(1) Derate linearly 8.57 mW/oC above 25o C.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is VCB = 30 V, PD = 250
mW each transistor, TA = 25o C. Refer
to MIL-PRF-19500/559 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-20
(972)323-2200
Fax (972)323-2396



2N6989U
Type JANTX, JANTXV, 2N6989U
Electrical Characterics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
Off Characteristics
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
ICBO2
Collector-Base Cutoff Current
Collector-Base Cutoff Current
IEBO Emitter-Base Cutoff Current
On Characteristics
hFE1 Forward Current Transfer Ratio
hFE2 Forward Current Transfer Ratio
hFE3
hFE4
hFE5
hFE6
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
VBE(SAT)1
VBE(SAT)2
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VBE(SAT)3 Base-Emitter Saturation Voltage
Small-Signal Characteristics
hfe
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
hfe
Small-Signal Short Circuit Forward
Current Transfer Ratio
Cobo Open Circuit Output Capacitance
Cibo Input Capacitance
Switching Charateristics
ton Turn-On Time
toff Turn-Off Time
Transistor to Transistor Isolation
Rt-t Isolation Resistance
MIN MAX UNITS
TEST CONDITIONS
75 V IC = 10 µA
50 V IC = 10 mA(2)
6 V IE = 10 µA
10 nA VCB = 60 V
10 µA VCB = 60 V, TA = 150o C
10 nA VEB = 4 V
50
75 325
100
100 300
30
35
0.3
1.0
0.45
0.6 1.2
2.0
1.4
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA(2)
VCE = 10 V, IC = 150 mA(2)
VCE = 10 V, IC = 500 mA(2)
VCE = 10 V, IC = 10 mA, TA = 55o C(2)
V IC = 150 mA, IB = 15 mA(2)
V IC = 500 mA, IB = 50 mA(2)
V IC = 150 mA, IB = 15 mA, TA = 150o C(2)
V IC = 150 mA, IB = 15 mA(2)
V IC = 500 mA, IB = 50 mA(2)
V IC = 150 mA, IB = 15 mA, TA = 55o C(2)
2.5 8.0
50
8
33
VCE = 10 V, IC = 20 mA, f = 100 MHz
VCE = 10 V, IC = 1 mA, f = 1kHz
pF VCB = 10 V, IE = 0, 100 kHz f 1 MHz
pF VEB = 0.5 V, IC = 0, 100 kHz f 1 MHz
35 ns VCC = 30 V, IC = 150 mA, IB = 15 mA
300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
10k MVt-t = 500 V
(2) Pulsed Test: Pulse Width = 300 µs ±50, 1-2 % Duty Cycle.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-21
(972)323-2200
Fax (972)323-2396





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