Triac. BCR5KM-12LB Datasheet

BCR5KM-12LB Triac. Datasheet pdf. Equivalent

Part BCR5KM-12LB
Description Triac
Feature www.DataSheet4U.com BCR5KM-12LB Triac Medium Power Use REJ03G0317-0200 Rev.2.00 Mar 06, 2007 Featu.
Manufacture Renesas Technology
Datasheet
Download BCR5KM-12LB Datasheet

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BCR5KM-12LB
www.DataSheet4U.com
BCR5KM-12LB
Triac
Medium Power Use
Features
IT (RMS) : 5 A
VDRM : 600 V
IFGTI , IRGTI, IRGTIII : 20 mA (10 mA)Note5
Viso : 2000 V
The product guaranteed maximum junction
temperature 150°C.
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
123
REJ03G0317-0200
Rev.2.00
Mar 06, 2007
Insulated Type
Planar Passivation Type
Refer to the recommended circuit values around the
triac before using.
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, small motor control, heater control, solenoid driver, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Rev.2.00 Mar 06, 2007 page 1 of 7



BCR5KM-12LB
BCR5KM-12LB
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
5
50
10.4
3
0.3
10
2
– 40 to +150
– 40 to +150
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 121°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
— 2.0 mA Tj = 150°C, VDRM applied
On-state voltage
VTM — — 1.8 V Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Gate trigger voltageNote2 Ι VFGTΙ — — 1.5 V Tj = 25°C, VD = 6 V, RL = 6 ,
ΙΙ VRGTΙ — — 1.5 V RG = 330
Gate trigger currentNote2
ΙΙΙ VRGTΙΙΙ
Ι IFGTΙ
ΙΙ IRGTΙ
ΙΙΙ IRGTΙΙΙ
— 1.5
V
— 20Note5 mA Tj = 25°C, VD = 6 V, RL = 6 ,
— 20Note5 mA RG = 330
20Note5
mA
Gate non-trigger voltage
Thermal resistance
VGD
Rth (j-c)
0.2/0.1
— V Tj = 125°C/150°C, VD = 1/2 VDRM
3.8 °C/W Junction to caseNote3
Critical-rate of rise of off-state (dv/dt)c 5/1 — — V/µs Tj = 125°C/150°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
Rev.2.00 Mar 06, 2007 page 2 of 7





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