Triac. BCR5PM-12L Datasheet

BCR5PM-12L Triac. Datasheet pdf. Equivalent

Part BCR5PM-12L
Description Triac
Feature www.DataSheet4U.com BCR5PM-12L Triac Medium Power Use (The product guaranteed maximum junction temp.
Manufacture Renesas Technology
Datasheet
Download BCR5PM-12L Datasheet

www.DataSheet4U.com BCR5PM-12L Triac Medium Power Use (The BCR5PM-12L Datasheet
BCR5PM-12LA Triac Medium Power Use Preliminary Datasheet R0 BCR5PM-12LA Datasheet
BCR5PM-12LG Triac Medium Power Use REJ03G1507-0200 Rev.2.00 BCR5PM-12LG Datasheet
Recommendation Recommendation Datasheet BCR5PM-12L Datasheet





BCR5PM-12L
www.DataSheet4U.com
BCR5PM-12L
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
Features
IT (RMS) : 5 A
VDRM : 600 V
IFGTI, IRGTI, IRGTIII : 20 mA (10 mA)Note5
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
Viso : 2000 V
Insulated Type
Planar Passivation Type
REJ03G0460-0300
Rev.3.00
Mar 06, 2007
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general controlling device
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Rev.3.00 Mar 06, 2007 page 1 of 7



BCR5PM-12L
BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
5
50
10.4
3
0.3
10
2
– 40 to +150
– 40 to +150
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 120°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
— 2.0 mA Tj = 150°C, VDRM applied
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
VTM
Ι VFGTΙ
ΙΙ VRGTΙ
ΙΙΙ VRGTΙΙΙ
Ι IFGTΙ
ΙΙ IRGTΙ
ΙΙΙ IRGTΙΙΙ
— 1.8 V Tc = 25°C, ITM = 7 A,
Instantaneous measurement
— 1.5 V Tj = 25°C, VD = 6 V, RL = 6 ,
— 1.5 V RG = 330
— 1.5
V
— 20Note5 mA Tj = 25°C, VD = 6 V, RL = 6 ,
— 20Note5 mA RG = 330
20Note5
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote4
VGD
Rth (j-c)
(dv/dt)c
0.2/0.1
5/1
— V Tj = 125°C/150°C, VD = 1/2 VDRM
4.0 °C/W Junction to caseNote3
— V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
Rev.3.00 Mar 06, 2007 page 2 of 7





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)